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Crystals
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Low-Dimensional Materials for Electronic Device Applications
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Low-Dimensional Materials for Electronic Device Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (20 July 2021) | Viewed by 11866

Special Issue Editors

Prof. Dr. Wen Lei

E-Mail Website
Guest Editor
School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Australia
Interests: thin film semiconductor materials and devices; infrared materials and detector devices; low dimensional materials and devices; molecular beam epitaxy; chemical vapor deposition
Dr. Baolai Liang

E-Mail Website
Guest Editor
California NanoSystems Institute, University of California, Los Angeles, USA
Interests: semiconductor quantum dot
Prof. Junqi Liu

E-Mail Website
Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, China
Interests: infrared and THz semiconductor materials, devices; quantum cascade lasers; semiconductor photodetectors
Prof. Weiming Cheng

E-Mail Website
Guest Editor
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Interests: Optoelectronics

Special Issue Information

Dear Colleagues,

Recently, low-dimensional (zero-, one and two-dimensional) materials have attracted considerable attention and become the focus of scientific research and engineering applications. This is due to their novel physical and chemical properties, the result of their size and quantum effects, as well as potential applications in various kinds of devices, e.g., optoelectronics, nanoelectronics, chemical sensing, medical diagnostics, drug delivery, etc. In particular, semiconductor quantum dot lasers have been intensively investigated for applications such as light sources in modern optical communication systems. Another example is graphene, which is a typical two-dimensional material. Graphene has been intensively studied in the past few years due to its fascinating physical properties, such as ultra-high electron mobility, and various potential device applications, including transistors and photodetectors. The importance of this research field is evident from the increasing number of projects funded around the world and the rapidly increasing number of research publications in the literature. Therefore, this is the perfect time to present a Special Issue on “Low-dimensional materials for electronic device applications” in Crystals.

The aim of this Special Issue is to introduce the recent advances in this specific field to the readers of Crystals, as well as to enable the exchange of knowledge and information between scientists/engineers. Prospective authors from both academia and industry are invited to submit original research and comprehensive review articles which are relevant but not limited to the following topics:

  1. Growth and synthesis of low-dimensional materials, such as quantum wells/dots/wires, nanowires, nanotubes, superlattices, 2D materials, photonics crystals, etc.
  2. Novel characterization and analysis techniques (structural, electrical, optical, etc)
  3. Device processing and electronic device applications, such as transistors, lasers/LED, detectors/sensors, modulators, solar cells, etc.
  4. Physics relevant to low-dimensional materials
  5. Modeling and simulation of material growth/synthesis and electronic device performance

Prof. Dr. Wen Lei
Dr. Baolai Liang
Prof. Junqi Liu
Prof. Weiming Cheng
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • low-dimensional materials
  • crystal growth
  • material characterization
  • low-dimensional physics
  • electronic devices

Published Papers (5 papers)

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Research

10 pages, 4620 KiB  
Article
Simulation of Extended Wavelength Avalanche Photodiode with the Type-II Superlattice Absorption Layer
by Wei-Lin Zhao, Wei Wang, Chen Liu, Ze-Peng Hou, Hai-Feng Ye, Run-Yu Huang, Zai-Bo Li, Jia-Xin Zhang, Xue-Yan Yang, Hong-Xia Zhu and Yan-Li Shi
Crystals 2021, 11(10), 1210; https://doi.org/10.3390/cryst11101210 - 07 Oct 2021
Cited by 2 | Viewed by 2058
Abstract
The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight software. Based on separate absorption, grading, charge, and multiplication (SAGCM) structure, [...] Read more.
The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight software. Based on separate absorption, grading, charge, and multiplication (SAGCM) structure, the absorption layer of APD was replaced with InGaAs/GaAsSb superlattice compared to conventional InGaAs/InP SAGCM APD. The results indicated that the breakdown voltage increased with the doping concentration of the absorption layer. When the thickness of the multiplication layer increased from 0.1 μm to 0.6 μm, the linear range of punchthrough voltage increased from 16 V to 48 V, and the breakdown voltage decreased at first and then increased when the multiplication layer reached the critical thickness at 0.35 μm. The grading layer could not only slow down the hole carrier, but also adjust the electric field. The dark current was reduced to about 10 nA and the gain was over 100 when the APD was cooled to 240 K. The response wavelength APD could be extended to 2.8 μm by fine tuning the superlattice parameters. The simulation results indicated that the APD using superlattice materials has potential to achieve a long wavelength response, a high gain, and a low dark current. Full article
(This article belongs to the Special Issue Low-Dimensional Materials for Electronic Device Applications)
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8 pages, 2053 KiB  
Article
Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel
by Shuai Guo, Xue Chen, Dengkui Wang, Xuan Fang, Dan Fang, Jilong Tang, Lei Liao and Zhipeng Wei
Crystals 2021, 11(10), 1160; https://doi.org/10.3390/cryst11101160 - 23 Sep 2021
Cited by 1 | Viewed by 1851
Abstract
Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs [...] Read more.
Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs nanowire (NW) and a GaAs 2D non-layer sheet (2DNLS). The photodetector exhibits a fast response with a rise time of ~4.7 ms and decay time of ~6.1 ms. The high-speed performance is attributed to an electron transmission channel at the interface between the GaAs NW and GaAs 2DNLS. Furthermore, the fast electron channel is confirmed by eliminating interface states via wet passivation. This work puts forward an effective way to realize a high-speed photodetector by utilizing the surface states of low-dimensional materials. Full article
(This article belongs to the Special Issue Low-Dimensional Materials for Electronic Device Applications)
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15 pages, 5693 KiB  
Article
One-Step Fabrication of Inverted Pyramid Textured Silicon Wafers via Silver-Assisted Chemical Etching Combing with Synergism of Polyvinylpyrrolidone (PVP)
by Yuchen Liu, Kousuo Dong, Linsheng Bian and Zisheng Guan
Crystals 2021, 11(5), 459; https://doi.org/10.3390/cryst11050459 - 21 Apr 2021
Cited by 4 | Viewed by 3130
Abstract
Inverted pyramid-texturing of silicon surface has been proven to have great application potential in silicon solar cells. In this paper, we utilized Ag-assisted chemical etching (Ag–ACE) technology combing with polyvinylpyrrolidone (PVP) to fabricate an inverted pyramid textured Si surface. We call it Ag@PVP–ACE. [...] Read more.
Inverted pyramid-texturing of silicon surface has been proven to have great application potential in silicon solar cells. In this paper, we utilized Ag-assisted chemical etching (Ag–ACE) technology combing with polyvinylpyrrolidone (PVP) to fabricate an inverted pyramid textured Si surface. We call it Ag@PVP–ACE. The effect of different experimental parameters on etching results was observed. We show that the microstructure of the Si surface exhibited two states as the concentration of NH4HF2 and PVP concentration changed: polishing and inverted pyramid texturing. Meanwhile, we found inverted pyramids easier to form at the high temperature and low H2O2 concentration of the etching system. Consequently, compared to inverted pyramid structures fabricated by nanostructure rebuilding (NSR) technology and Ag@PVP–ACE, we consider that Ag@PVP–ACE technology could become a viable strategy for fabricating inverted pyramid textured Si wafers in Si solar cells production. Full article
(This article belongs to the Special Issue Low-Dimensional Materials for Electronic Device Applications)
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9 pages, 3401 KiB  
Article
Microstructure and Optical Characterization of Mid-Wave HgCdTe Grown by MBE under Different Conditions
by Xiao-Fang Qiu, Sheng-Xi Zhang, Jian Zhang, Yi-Cheng Zhu, Cheng Dou, San-Can Han, Yan Wu and Ping-Ping Chen
Crystals 2021, 11(3), 296; https://doi.org/10.3390/cryst11030296 - 16 Mar 2021
Cited by 4 | Viewed by 2245
Abstract
The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman [...] Read more.
The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman and photoluminescence. The effects of growth temperature on the crystal quality of HgCdTe/CdTe have been studied in detail. The HgCdTe film grown at the lower temperature of 151 °C has high crystal quality, the interface is flat and there are no micro twins. While the crystal quality of the HgCdTe grown at higher temperature of 155 °C is poor, and there are defects and micro twins at the HgCdTe/CdTe interface. The research results demonstrate that the growth temperature significantly affects the crystal quality and optical properties of HgCdTe films. Full article
(This article belongs to the Special Issue Low-Dimensional Materials for Electronic Device Applications)
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7 pages, 3520 KiB  
Article
1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance
by Xia-Yida MaXueer, Yi-Ming He, Zun-Ren Lv, Zhong-Kai Zhang, Hong-Yu Chai, Dan Lu, Xiao-Guang Yang and Tao Yang
Crystals 2020, 10(11), 980; https://doi.org/10.3390/cryst10110980 - 29 Oct 2020
Cited by 3 | Viewed by 1867
Abstract
Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 μm p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 μm long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at [...] Read more.
Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 μm p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 μm long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at ground state, with an ultra-low threshold current and a high maximum output power. The p-doped QD laser also shows enhanced dynamic characteristics, with a 10 Gb/s large-signal direct modulation rate and a 7.8 GHz 3dB-bandwidth. In addition, the p-doped QD laser exhibits a strong coherent optical feedback resistance, which might be beyond −9 dB. Full article
(This article belongs to the Special Issue Low-Dimensional Materials for Electronic Device Applications)
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