Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching
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Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain
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Institut de Física d’Altes Energies (IFAE-BIST), Edifici Cn. Facultat Ciències Nord, Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
3
Intelligent Materials and Systems Laboratory (IMS Lab), Institute of Technology, University of Tartu, Nooruse 1, 50411 Tartu, Estonia
*
Author to whom correspondence should be addressed.
Sensors 2020, 20(21), 6037; https://doi.org/10.3390/s20216037
Received: 29 August 2020
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Revised: 7 October 2020
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Accepted: 19 October 2020
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Published: 23 October 2020
(This article belongs to the Section Physical Sensors)
This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. Three prototypes were designed and the structural characteristics were varied, particularly mass and thickness, which are directly related to the resonance frequency, quality factor, and pressure; while the same geometry at the frontal level, as well as the air gap, were maintained to allow structural comparative analysis of the structures. The devices were released through an isotropic wet etching step performed in-house after the CMOS die manufacturing, and characterized in terms of Q-factor vs. pressure, resonant frequency, and drift vs. temperature and biasing voltage.
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Keywords:
BEOL; CMOS; MEMS; resonator; etching; resonance; quality factor; pressure sensor
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MDPI and ACS Style
Mata-Hernandez, D.; Fernández, D.; Banerji, S.; Madrenas, J. Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching. Sensors 2020, 20, 6037. https://doi.org/10.3390/s20216037
AMA Style
Mata-Hernandez D, Fernández D, Banerji S, Madrenas J. Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching. Sensors. 2020; 20(21):6037. https://doi.org/10.3390/s20216037
Chicago/Turabian StyleMata-Hernandez, Diana, Daniel Fernández, Saoni Banerji, and Jordi Madrenas. 2020. "Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching" Sensors 20, no. 21: 6037. https://doi.org/10.3390/s20216037
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