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Open AccessArticle

Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

by Lihao Wang 1,2,4, Meijie Liu 1,2,4, Junyuan Zhao 1,2,4, Jicong Zhao 3,4, Yinfang Zhu 1,2,4,*, Jinling Yang 1,2,4,* and Fuhua Yang 1,2
1
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China
4
State Key Laboratory of Transducer Technology, Shanghai 200050, China
*
Authors to whom correspondence should be addressed.
Micromachines 2020, 11(7), 638; https://doi.org/10.3390/mi11070638
Received: 1 June 2020 / Revised: 23 June 2020 / Accepted: 27 June 2020 / Published: 29 June 2020
(This article belongs to the Special Issue Micro Process-Devices)
This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etching homogeneity and repeatability. An ICP etching routine is developed to make silicon tips with apex radius less than 5 nm, aspect ratio greater than 5 at a tip height of 200 nm, and tip height more than 10 μm, and high fabrication yield is achieved by mask compensation and precisely controlling lateral etch depth, which is significant for large-scale manufacturing. View Full-Text
Keywords: inductively coupled plasma etching; nanometer tip; high aspect ratio; small apex inductively coupled plasma etching; nanometer tip; high aspect ratio; small apex
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MDPI and ACS Style

Wang, L.; Liu, M.; Zhao, J.; Zhao, J.; Zhu, Y.; Yang, J.; Yang, F. Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching. Micromachines 2020, 11, 638.

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