Two-Dimensional Materials for Electronic and Optoelectronic Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: 30 April 2025 | Viewed by 7548

Special Issue Editor

SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
Interests: memristor; 2D materials fabrication and device; in situ TEM
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Special Issue Information

Dear Colleagues,

Two-dimensional (2D) materials have garnered significant attention in recent years due to their unique properties and potential applications in various devices. These materials, which are only a few atoms thick, exhibit exceptional mechanical, electrical, and optical properties that make them promising candidates for next-generation electronic and optoelectronic devices. Researchers and engineers are actively exploring novel ways to incorporate 2D materials into existing technologies to enhance performance, reduce energy consumption, and enable new functionalities. As research in this field continues to advance, the potential for transformative breakthroughs in device design and functionality is becoming increasingly evident.

Accordingly, this Special Issue seeks to showcase research papers, communications, and review articles that focus on the current state of the art in 2D materials research and highlight the exciting possibilities for future device applications.

We look forward to receiving your submissions!

Dr. Kuibo Yin
Guest Editor

Manuscript Submission Information

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Keywords

  • 2D material fabrication and characterization
  • electronic devices based on 2D materials
  • optoelectronic device based on 2D materials

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Published Papers (5 papers)

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Research

11 pages, 2119 KiB  
Article
Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments
by Khalil Tamersit, Abdellah Kouzou, José Rodriguez and Mohamed Abdelrahem
Micromachines 2025, 16(1), 33; https://doi.org/10.3390/mi16010033 - 28 Dec 2024
Viewed by 609
Abstract
Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) [...] Read more.
Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) as a means to circumvent oxide-related instabilities. The nanodevice is computationally assessed using a quantum simulation approach based on the self-consistent solutions of the Poisson equation and the quantum transport equation under the ballistic transport regime. The performance evaluation includes analysis of the transfer characteristics, subthreshold swing, on-state and off-state currents, current ratio, and scaling limits. Simulation results demonstrate that the investigated VGD TMD FET, featuring a gate-all-around (GAA) configuration, a TMD-based channel, and a thin vacuum gate dielectric, collectively compensates for the low dielectric constant of the VGD, enabling exceptional electrostatic control. This combination ensures superior switching performance in the ultrascaled regime, achieving a high current ratio and steep subthreshold characteristics. These findings position the GAA-VGD TMD FET as a promising candidate for advanced radiation-hardened nanoelectronics. Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Electronic and Optoelectronic Devices)
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10 pages, 3120 KiB  
Article
Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al2O3 Layer Formation: A Study on Preparation Techniques and Performance Impact
by Hongxuan Guo, Jiahao Yao, Siyuan Chen, Chong Qian, Xiangyu Pan, Kuibo Yin, Hao Zhu, Xu Gao, Suidong Wang and Litao Sun
Micromachines 2024, 15(12), 1499; https://doi.org/10.3390/mi15121499 - 16 Dec 2024
Viewed by 681
Abstract
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on [...] Read more.
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al’s and Au’s top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the Al2O3 film on the on/off window and voltage characteristics of the device were investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of AlN films, respectively. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and switching ratio. Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Electronic and Optoelectronic Devices)
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12 pages, 5351 KiB  
Article
A Study on Regulating the Residual Stress of Electroplated Cu by Manipulating the Nanotwin Directions
by Gangli Yang, Tailong Shi, Liu Chang, Hongjia Zhu, Dongyu Tong, Wending Yang, Zeyuan Li and Liyi Li
Micromachines 2024, 15(11), 1370; https://doi.org/10.3390/mi15111370 - 14 Nov 2024
Viewed by 694
Abstract
Glass substrate, a new type of substrate with excellent mechanical and electrical properties of glass itself, has great potential to become an ideal platform for heterogeneous integration in chiplet systems for high-performance computing applications. The residual stress of the metal layer generated on [...] Read more.
Glass substrate, a new type of substrate with excellent mechanical and electrical properties of glass itself, has great potential to become an ideal platform for heterogeneous integration in chiplet systems for high-performance computing applications. The residual stress of the metal layer generated on the glass surface during the electroplating process is one of the major bottlenecks of glass packaging technologies, resulting in glass-metal layer delamination and glass breakage. This paper demonstrated for the first time a method to regulate the residual stress by manipulating the nanotwin directions of the electroplated Cu. The experimental results show that nanotwins with three different directions (non-directional, vertical, and horizontal) can be manipulated by controlling electroplating conditions (concentration of Cl and gelatin, stirring speed). The orientations of non-directional, vertical, and horizontal nanotwinned Cu are non-oriented, 110 and 111, respectively. After electroplating, the 111-oriented nanotwinned Cu has the smallest residual stress (39.7 MPa). Annealing can significantly reduce the residual stress of nanotwinned Cu, which has been attributed to the decrease in the geometric necessity dislocation density. 110-oriented nanotwinned Cu had drastic recrystallization, while 111-oriented nanotwinned Cu and non-oriented nanotwinned Cu had only slight recrystallization. After annealing, the residual stress of 111-nt-Cu remains the lowest (29.1 MPa). Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Electronic and Optoelectronic Devices)
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13 pages, 2413 KiB  
Article
Modeling and Vibration Analysis of Carbon Nanotubes as Nanomechanical Resonators for Force Sensing
by Jun Natsuki, Xiao-Wen Lei, Shihong Wu and Toshiaki Natsuki
Micromachines 2024, 15(9), 1134; https://doi.org/10.3390/mi15091134 - 6 Sep 2024
Viewed by 1011
Abstract
Carbon nanotubes (CNTs) have attracted considerable attention as nanomechanical resonators because of their exceptional mechanical properties and nanoscale dimensions. In this study, a novel CNT-based probe is proposed as an efficient nanoforce sensing nanomaterial that detects external pressure. The CNT probe was designed [...] Read more.
Carbon nanotubes (CNTs) have attracted considerable attention as nanomechanical resonators because of their exceptional mechanical properties and nanoscale dimensions. In this study, a novel CNT-based probe is proposed as an efficient nanoforce sensing nanomaterial that detects external pressure. The CNT probe was designed to be fixed by clamping tunable outer CNTs. By using the mobile-supported outer CNT, the position of the partially clamped outer CNT can be controllably shifted, effectively tuning its resonant frequency. This study comprehensively investigates the modeling and vibration analysis of gigahertz frequencies with loaded CNTs used in sensing applications. The vibration frequency of a partially clamped CNT probe under axial loading was modeled using continuum mechanics, considering various parameters such as the clamping location, length, and boundary conditions. In addition, the interaction between external forces and CNT resonators was investigated to evaluate their sensitivity for force sensing. Our results provide valuable insights into the design and optimization of CNT-based nanomechanical resonators for high-performance force sensing applications. Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Electronic and Optoelectronic Devices)
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20 pages, 11059 KiB  
Article
Size-Effect-Based Dimension Compensations in Wet Etching for Micromachined Quartz Crystal Microstructures
by Yide Dong, Guangbin Dou, Zibiao Wei, Shanshan Ji, Huihui Dai, Kaiqin Tang and Litao Sun
Micromachines 2024, 15(6), 784; https://doi.org/10.3390/mi15060784 - 14 Jun 2024
Viewed by 3671
Abstract
Microfabrication technology with quartz crystals is gaining importance as the miniaturization of quartz MEMS devices is essential to ensure the development of portable and wearable electronics. However, until now, there have been no reports of dimension compensation for quartz device fabrication. Therefore, this [...] Read more.
Microfabrication technology with quartz crystals is gaining importance as the miniaturization of quartz MEMS devices is essential to ensure the development of portable and wearable electronics. However, until now, there have been no reports of dimension compensation for quartz device fabrication. Therefore, this paper studied the wet etching process of Z-cut quartz crystal substrates for making deep trench patterns using Au/Cr metal hard masks and proposed the first quartz fabrication dimension compensation strategy. The size effect of various sizes of hard mask patterns on the undercut developed in wet etching was experimentally investigated. Quartz wafers masked with initial vias ranging from 3 μm to 80 μm in width were etched in a buffered oxide etch solution (BOE, HF:NH4F = 3:2) at 80 °C for prolonged etching (>95 min). It was found that a larger hard mask width resulted in a smaller undercut, and a 30 μm difference in hard mask width would result in a 17.2% increase in undercut. In particular, the undercuts were mainly formed in the first 5 min of etching with a relatively high etching rate of 0.7 μm/min (max). Then, the etching rate decreased rapidly to 27%. Furthermore, based on the etching width compensation and etching position compensation, new solutions were proposed for quartz crystal device fabrication. And these two kinds of compensation solutions were used in the fabrication of an ultra-small quartz crystal tuning fork with a resonant frequency of 32.768 kHz. With these approaches, the actual etched size of critical parts of the device only deviated from the designed size by 0.7%. And the pattern position symmetry of the secondary lithography etching process was improved by 96.3% compared to the uncompensated one. It demonstrated significant potential for improving the fabrication accuracy of quartz crystal devices. Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Electronic and Optoelectronic Devices)
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