III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector ba...
III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters...
This paper reviews some of the basic issues in homoepitaxial growth of III-nitrides to enable a vertical device technology. It focuses on the use of metal organic chemical vapor deposition (MOCVD) to grow GaN and explores the effects of the native su...
A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structur...
Using the example of III–V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high-pressur...
Ultraviolet (UV) light plays an important role in air/water/surface sterilization now. Maintaining a certain light intensity is often required to attain the targeted effect. In this paper, on-chip power monitoring of a UV-A light-emitting diode (LED)...
p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both material...
III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and high-power electronic applications. Through the incorporation of magnetic ions, like transition metals and rare-earths, III-Nitrides have further extended...
A III-nitride red LED with an active region temperature of 835 °C on a Si substrate utilizing a strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm2 to 636 nm at 150 A/cm2. The on-wafer external qua...
Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as...
The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride...
In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm2 for device dimensions from 5 ×...
We present a brief review that highlights the importance of III-Nitride semiconductor compounds according to their structural, compositional, morphological, and optical properties, which have significant applications in new semiconductor devices and...
Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind o...
The tunnel junction (TJ) is a crucial structure for numerous III-nitride devices. A fundamental challenge for TJ design is to minimize the TJ resistance at high current densities. In this work, we propose the asymmetric p-AlGaN/i-InGaN/n-AlGaN TJ str...
The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications. To increase flexibility in integration options...
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventi...
β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for...
III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dis...
Mechanical stabilities and properties are critical in real applications of materials, as well as material and machine design. With the success of graphene, graphene-like materials arose tremendous interest in the past few years. Different from bulk m...
We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction A...
Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (VCSELs) in 2008, the maximum output power (Pmax) and threshold current density (Jth) has been improved significantly after a decade of technology advan...
Mechanical reliability is an essential prerequisite for III-nitride thin films throughout device fabrication and processing. However, the availability of nanoindentation data for metastable cubic phases remains limited, making cross-study comparisons...
Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’...
Group III-nitride semiconductors (GaN, AlN, InN) serve as foundational materials for modern optoelectronics, high-frequency microelectronics, and next-generation energy harvesting devices. However, traditional high-temperature epitaxy (>700 °C...
GaN-on-Si high-electron-mobility transistors have emerged as the next generation of high-powered and cost-effective microwave devices; however, the limited thermal conductivity of the Si substrate prevents the realization of their potential. In this...
The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells...
In this study, the optical gain characteristics of a green laser sample based on a III-Nitride InGaN single-quantum-well structure were investigated. The Green gap phenomenon, caused by bandgap fluctuations due to inhomogeneous indium composition and...
In this paper, ab initio calculations are used to determine polarization difference in zinc blende (ZB), hexagonal (H) and wurtzite (WZ) AlN-GaN and GaN-InN superlattices. It is shown that a polarization difference exists between WZ nitride compounds...
We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing...
In III-nitride quantum dots (QDs), optical transition rate is very low because of the large built-in electrostatic field caused by the spontaneous polarization (SP) and piezoelectric (PZ) effects. In this work, we study the screening potential which...
The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchers’ attention. Compared with the disadvantages of organic materials, such as complex molecular structure and p...
We investigate the photovoltaic performance of solar cells based on n-AlxIn1−xN (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1−xN layers own an optical bandgap absorption edge tuneabl...
III-Nitride semiconductors (BN, AlN, GaN, and InN) exhibit exceptional electronic and mechanical properties that render them indispensable for high-performance optoelectronic, power, and high-frequency device applications. This study implements first...
Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches...
In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through ap...
Micro-LED arrays exhibit high brightness, a long lifespan, low power consumption, and a fast response speed. In this paper, we have proposed a series-biased micro-LED array by using a nitride layer with multi-quantum wells epitaxial on sapphire subst...
This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potent...
In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilaye...
The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in In...
The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitrid...
Micro-light emitting diodes (Micro-LEDs) based on III-nitride semiconductors have become a research hotspot in the field of high-resolution display due to its unique advantages. However, the edge effect caused by inductively coupled plasma (ICP) dry...
To improve the performance of III-nitride compound semiconductor-based optoelectronic devices, highly reflective distributed Bragg reflectors (DBRs) are a requirement. In this report, AlN and Al1−xInxN layers were first sputtered and characteri...
With the advent of 6G mobile communication, the demand for ultra-high bandwidth wireless communication has increased rapidly, drawing significant attention to visible light communication (VLC) as a promising emerging technology. GaN-based laser diode...
The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growt...
Conventional photodetectors and image sensors deliver high-fidelity digital outputs but face a growing data-movement bottleneck: the energy and latency cost of transferring raw pixel streams to off-chip memory and processors increasingly dominates ov...
This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people′s lifestyles. The development process of group-III nitride LEDs is t...
In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate perf...
Ultraviolet (UV) photodetectors are essential for flame monitoring, environmental sensing, UV photography, optical communication, and biochemical analysis, and III-nitride quantum-well structures are promising platforms for such devices. Two-dimensio...
A comprehensive review of the application of different ceramics for MEMS devices is presented. Main ceramics materials used for MEMS systems and devices including alumina, zirconia, aluminum Nitride, Silicon Nitride, and LTCC are introduced. Conventi...
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