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Open AccessReview

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

1
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(5), 322; https://doi.org/10.3390/mi10050322
Received: 7 April 2019 / Revised: 28 April 2019 / Accepted: 8 May 2019 / Published: 13 May 2019
(This article belongs to the Special Issue Nanostructured Light-Emitters)
β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on β-Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on β-Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of β-Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (−2 0 1) β-Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented. View Full-Text
Keywords: β-Ga2O3; III-Nitrides; monoclinic; hexagonal arrangement; high-power; current distribution; vertical structure LED β-Ga2O3; III-Nitrides; monoclinic; hexagonal arrangement; high-power; current distribution; vertical structure LED
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MDPI and ACS Style

Li, W.; Zhang, X.; Meng, R.; Yan, J.; Wang, J.; Li, J.; Wei, T. Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs. Micromachines 2019, 10, 322.

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