Next Article in Journal
An Electrothermal Cu/W Bimorph Tip-Tilt-Piston MEMS Mirror with High Reliability
Previous Article in Journal
Separation of Nano- and Microparticle Flows Using Thermophoresis in Branched Microfluidic Channels
Previous Article in Special Issue
Enhancement of Light Extraction Efficiency for InGaN/GaN Light-Emitting Diodes Using Silver Nanoparticle Embedded ZnO Thin Films
Article Menu

Export Article

Open AccessReview

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

1,2,3, 1,2,3, 1,2,3, 1,2,3, 1,2,3, 1,2,3 and 1,2,3,*
1
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, University of Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(5), 322; https://doi.org/10.3390/mi10050322
Received: 7 April 2019 / Revised: 28 April 2019 / Accepted: 8 May 2019 / Published: 13 May 2019
(This article belongs to the Special Issue Nanostructured Light-Emitters)
  |  
PDF [8703 KB, uploaded 13 May 2019]
  |  

Abstract

β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on β-Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on β-Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of β-Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (−2 0 1) β-Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented. View Full-Text
Keywords: β-Ga2O3; III-Nitrides; monoclinic; hexagonal arrangement; high-power; current distribution; vertical structure LED β-Ga2O3; III-Nitrides; monoclinic; hexagonal arrangement; high-power; current distribution; vertical structure LED
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Li, W.; Zhang, X.; Meng, R.; Yan, J.; Wang, J.; Li, J.; Wei, T. Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs. Micromachines 2019, 10, 322.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top