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III-Nitride Short Period Superlattices for Deep UV Light Emitters

Nano Tech Center, Department Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79423, USA
Appl. Sci. 2018, 8(12), 2362; https://doi.org/10.3390/app8122362
Received: 17 October 2018 / Revised: 12 November 2018 / Accepted: 20 November 2018 / Published: 23 November 2018
(This article belongs to the Special Issue Highly Efficient UV and Visible Light Sources)
III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dislocation density in the active layer. Such SPSLs can be grown using both molecular beam epitaxy and metal organic chemical vapor deposition approaches. Of the two growth methods, the former is discussed in more detail in this review. The electrical and optical properties of such SPSLs, as well as the design and fabrication of deep UV light-emitting devices based on these materials, are described and discussed. View Full-Text
Keywords: III-nitrides; short period superlattices; light emitters III-nitrides; short period superlattices; light emitters
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Nikishin, S.A. III-Nitride Short Period Superlattices for Deep UV Light Emitters. Appl. Sci. 2018, 8, 2362.

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