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Article

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

1
Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio al. 3, LT-10257 Vilnius, Lithuania
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Institute of High Pressure Physics PAS (UNIPRESS), ul. Sokołowska 29/37, 01-142 Warsaw, Poland
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Institute of Photonics and Nanotechnology, Vilnius University, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania
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Lukasiewicz Research Network-Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, Poland
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Institute of Applied Electrodynamics and Telecommunications, Vilnius University, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania
*
Authors to whom correspondence should be addressed.
Academic Editor: Alexander A. Lebedev
Materials 2022, 15(3), 1118; https://doi.org/10.3390/ma15031118
Received: 29 December 2021 / Revised: 25 January 2022 / Accepted: 28 January 2022 / Published: 31 January 2022
(This article belongs to the Special Issue Growth and Characteristics of Nitride Semiconductor Layers)
A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of the layer were investigated planning realization of microwave power and terahertz plasmonic devices. The measured X-ray diffraction and modeled band diagram characteristics revealed the structural parameters of the grown In0.165Al0.775Ga0.06N/Al0.6Ga0.4N/GaN heterostructure, explaining the origin of barrier photoluminescence peak position at 3.98 eV with the linewidth of 0.2 eV and the expected red-shift of 0.4 eV only. The thermally stable density of the two-dimension electron gas at the depth of 10.5 nm was experimentally confirmed to be 1.2 × 1013 cm−2 (1.6 × 1013 cm−2 in theory) with the low-field mobility values of 1590 cm2/(V·s) and 8830 cm2/(V·s) at the temperatures of 300 K and 77 K, respectively. View Full-Text
Keywords: InAlGaN; GaN; high electron mobility transistor structures; III-nitride heterostructures; microwave power devices; THz plasmonic devices InAlGaN; GaN; high electron mobility transistor structures; III-nitride heterostructures; microwave power devices; THz plasmonic devices
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MDPI and ACS Style

Jorudas, J.; Prystawko, P.; Šimukovič, A.; Aleksiejūnas, R.; Mickevičius, J.; Kryśko, M.; Michałowski, P.P.; Kašalynas, I. Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials 2022, 15, 1118. https://doi.org/10.3390/ma15031118

AMA Style

Jorudas J, Prystawko P, Šimukovič A, Aleksiejūnas R, Mickevičius J, Kryśko M, Michałowski PP, Kašalynas I. Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials. 2022; 15(3):1118. https://doi.org/10.3390/ma15031118

Chicago/Turabian Style

Jorudas, Justinas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, and Irmantas Kašalynas. 2022. "Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures" Materials 15, no. 3: 1118. https://doi.org/10.3390/ma15031118

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