Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures
Abstract
:1. Introduction
2. Samples
3. Results
3.1. Secondary-Ion Mass Spectrometry (SIMS) of the Heterostructure
3.2. X-ray Diffraction (XRD) Analysis of the Heterostructure
- (i).
- we made expected calculations of the gas-phase with surplus indium and aluminum precursors only, without flowing the gallium,
- (ii).
- we grew 30–50 nm thick calibration samples on GaN/Sapphire increasing the growth temperature and checking for lattice-matching to GaN in-plane lattice compatibility by HR-XRD,
- (iii).
- we applied the preferred high growth temperature and the growth rate to the HEMT final structure, growing a 9 nm thick LM-InAlGaN barrier.
3.3. Band Diagram of the Heterostructure
3.4. Two-Dimensional Electron Gas (2DEG)
3.5. Schottky Contact to 2DEG
3.6. Photoluminescence of the Heterostructure
3.7. Application of the Heterostructure for Electronic Devices
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Jorudas, J.; Prystawko, P.; Šimukovič, A.; Aleksiejūnas, R.; Mickevičius, J.; Kryśko, M.; Michałowski, P.P.; Kašalynas, I. Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials 2022, 15, 1118. https://doi.org/10.3390/ma15031118
Jorudas J, Prystawko P, Šimukovič A, Aleksiejūnas R, Mickevičius J, Kryśko M, Michałowski PP, Kašalynas I. Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials. 2022; 15(3):1118. https://doi.org/10.3390/ma15031118
Chicago/Turabian StyleJorudas, Justinas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, and Irmantas Kašalynas. 2022. "Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures" Materials 15, no. 3: 1118. https://doi.org/10.3390/ma15031118