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Volume 13
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10.3390/cryst13060915
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Review

Deep Ultraviolet Photodetector: Materials and Devices

by
Wannian Fang
1,2,
Qiang Li
1,2,*,
Jiaxing Li
2,
Yuxuan Li
2,
Qifan Zhang
2,
Ransheng Chen
2,
Mingdi Wang
2,
Feng Yun
2 and
Tao Wang
3
1
Key Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an 710049, China
2
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
3
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK
*
Author to whom correspondence should be addressed.
Crystals 2023, 13(6), 915; https://doi.org/10.3390/cryst13060915
Submission received: 31 March 2023 / Revised: 8 May 2023 / Accepted: 2 June 2023 / Published: 5 June 2023
(This article belongs to the Special Issue Wide-Bandgap Semiconductors)
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Abstract

The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchers’ attention. Compared with the disadvantages of organic materials, such as complex molecular structure and poor stability, inorganic materials are widely used in the field of DUV detection because of their good stability, controllable growth, and other characteristics. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional detectors. Herein, the development history and types of DUV detectors are briefly introduced. Typical UWBG detection materials and their preparation methods, as well as their research and application status in the field of DUV detection, are emphatically summarized and reviewed, including III-nitride semiconductors, gallium oxide, diamond, etc. Finally, problems pertaining to DUV detection materials, such as the growth of materials, the performance of devices, and their future development, are also discussed.
Keywords: ultrawide-bandgap semiconductor; deep ultraviolet photodetector; boron nitride; aluminum nitride; aluminum gallium nitride; gallium oxide; diamond ultrawide-bandgap semiconductor; deep ultraviolet photodetector; boron nitride; aluminum nitride; aluminum gallium nitride; gallium oxide; diamond

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MDPI and ACS Style

Fang, W.; Li, Q.; Li, J.; Li, Y.; Zhang, Q.; Chen, R.; Wang, M.; Yun, F.; Wang, T. Deep Ultraviolet Photodetector: Materials and Devices. Crystals 2023, 13, 915. https://doi.org/10.3390/cryst13060915

AMA Style

Fang W, Li Q, Li J, Li Y, Zhang Q, Chen R, Wang M, Yun F, Wang T. Deep Ultraviolet Photodetector: Materials and Devices. Crystals. 2023; 13(6):915. https://doi.org/10.3390/cryst13060915

Chicago/Turabian Style

Fang, Wannian, Qiang Li, Jiaxing Li, Yuxuan Li, Qifan Zhang, Ransheng Chen, Mingdi Wang, Feng Yun, and Tao Wang. 2023. "Deep Ultraviolet Photodetector: Materials and Devices" Crystals 13, no. 6: 915. https://doi.org/10.3390/cryst13060915

APA Style

Fang, W., Li, Q., Li, J., Li, Y., Zhang, Q., Chen, R., Wang, M., Yun, F., & Wang, T. (2023). Deep Ultraviolet Photodetector: Materials and Devices. Crystals, 13(6), 915. https://doi.org/10.3390/cryst13060915

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