Current and Future Directions in Crystal Growth by Molecular Beam Epitaxy (MBE)
This special issue belongs to the section "Inorganic Crystalline Materials".
Special Issue Information
Dear Colleagues,
Since its development in the 1970s, MBE (molecular beam epitaxy) has become one of the most important and influential techniques for epitaxial crystal growth. Its versatility means that a wide range of families of crystalline materials, from metals to oxides, can be grown by MBE. Many of the major breakthroughs in semiconductor physics, from quantum wells to quantum dots, owe their origin to MBE research.
MBE continues to drive interdisciplinary innovation in materials science, physics, and electrical engineering, among other fields. The purposes of this Special Issue are: (1) to catalog some of the key recent advances in the synthesis and applications of crystalline materials made possible by MBE; and (2) to provide an outline for the future directions of this indispensable growth technique. To this end, we encourage research contributions on epitaxial growth by MBE that cover a broad range of disciplines, material systems, and applications. Some suggested topics are included in the keywords below, but research in other areas is also of significant interest.
Dr. Paul J. Simmonds
Guest Editor
Manuscript Submission Information
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Keywords
- Thin films, strained-layer superlattices, and low-dimensional heterostructures
- Nanostructures and self-assembly
- Functional materials
- Dissimilar materials integration
- Van der Waals epitaxy: 2D materials and topological insulators
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Published Papers
Crystals - ISSN 2073-4352