Next Article in Journal
Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling
Next Article in Special Issue
Editorial of Special Issue “Nanostructured Light-Emitters”
Previous Article in Journal
Cell Culture on Low-Fluorescence and High-Resolution Photoresist
Previous Article in Special Issue
Large-Scale Fabrication of Photonic Nanojet Array via Template-Assisted Self-Assembly
Open AccessArticle

On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes

by Moheb Sheikhi 1,2,†, Yijun Dai 1,2,†, Mei Cui 1,2, Liang Li 1,2, Jianzhe Liu 3, Wenan Lan 3, Rongrong Jiang 1, Wei Guo 1,2,*, Kuan W.A. Chee 4,5,* and Jichun Ye 1,2
1
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
Zhe Jiang Bright Semiconductor Technology Co., Ltd., Jinhua 321016, China
4
Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
5
Laser Research Institute, Shandong Academy of Sciences, Qingdao 226100, China
*
Authors to whom correspondence should be addressed.
These authors contribute equally to this work.
Micromachines 2020, 11(6), 572; https://doi.org/10.3390/mi11060572
Received: 6 November 2019 / Revised: 5 December 2019 / Accepted: 17 December 2019 / Published: 5 June 2020
(This article belongs to the Special Issue Nanostructured Light-Emitters)
The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices. View Full-Text
Keywords: III-nitride thin film; nanostructures; ultraviolet emitters; surface passivation; luminescence intensity III-nitride thin film; nanostructures; ultraviolet emitters; surface passivation; luminescence intensity
Show Figures

Figure 1

MDPI and ACS Style

Sheikhi, M.; Dai, Y.; Cui, M.; Li, L.; Liu, J.; Lan, W.; Jiang, R.; Guo, W.; Chee, K.W.; Ye, J. On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes. Micromachines 2020, 11, 572.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop