GaN-Based Materials and Devices

Dear Colleagues,

Gallium nitride (GaN) and its alloy family have been infiltrated into a variety of essential daily applications, including light-emitting diodes (LEDs) and transistors, since the discovery of GaN based LEDs in the late 1990s. Similar to other compound semiconductor materials, the material growth and device architectures play crucial roles in the success of commercial GaN based devices. Moreover, due to the unique advantages in mechanical and chemical robustness, direct bandgap tunability from ultraviolet (UV) to infrared (IR), and ultra-wide bandgap, the III-nitride material system has additional benefits in optoelectronics and transistor devices compared to conventional semiconductor materials. After more than 30 years of developments in both academia and industry, many emerging device applications and novel growth approaches have been demonstrated.

We would like to invite researchers to contribute to this Special Issue on GaN-based Materials and Devices. This Special Issue provides reviews while introducing new research updates on some key aspects of GaN-based material growth and device designs. The potential topics of this Special Issue include but are not limited to:

• High indium and/or aluminum composition growth
• Ga-polar or N-polar growth
• Novel nitride growth, such as boron nitride, scandium aluminium nitride
• Light-emitting diodes (LEDs)
• Solar cells
• Laser diodes (LDs)
• Vertical-cavity surface-emitting lasers (VCSELs)
• Microcavity or resonant cavity LEDs
• MicroLEDs
• UV LEDs
• Long-wavelength devices
• GaN based HEMTs or FETs
• Tunnel junctions
• III-nitride device physics
• III-nitride quantum dot growth
• III-nitride device processing

Dr. Matthew S. Wong
Dr. Islam H. Sayed
Guest Editors

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