Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

doi:10.3390/ma10060605

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Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

¹,

²,

¹,

³,

⁴

and

Dong-Sing Wuu

^1,*

Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan

Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan

Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan

⁴

Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

Author to whom correspondence should be addressed.

Academic Editor: Lioz Etgar

Materials 2017, 10(6), 605; https://doi.org/10.3390/ma10060605

Received: 10 April 2017 / Revised: 25 May 2017 / Accepted: 29 May 2017 / Published: 31 May 2017

(This article belongs to the Section Manufacturing Processes and Systems)

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Abstract

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1–2 × 10⁹ cm⁻², which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁹ cm⁻²). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices. View Full-Text

Keywords: AlGaN; hydride vapor phase epitaxy (HVPE); nanoscale-patterned sapphire substrate (NPSS); dislocation density (TD)

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MDPI and ACS Style

Tasi, C.-T.; Wang, W.-K.; Tsai, T.-Y.; Huang, S.-Y.; Horng, R.-H.; Wuu, D.-S. Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy. Materials 2017, 10, 605. https://doi.org/10.3390/ma10060605

AMA Style

Tasi C-T, Wang W-K, Tsai T-Y, Huang S-Y, Horng R-H, Wuu D-S. Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy. Materials. 2017; 10(6):605. https://doi.org/10.3390/ma10060605

Chicago/Turabian Style

Tasi, Chi-Tsung, Wei-Kai Wang, Tsung-Yen Tsai, Shih-Yung Huang, Ray-Hua Horng, and Dong-Sing Wuu. 2017. "Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy" Materials 10, no. 6: 605. https://doi.org/10.3390/ma10060605

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Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

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