Van der Waals Epitaxy of III-Nitrides and Its Applications
1
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
*
Authors to whom correspondence should be addressed.
Materials 2020, 13(17), 3835; https://doi.org/10.3390/ma13173835
Received: 15 July 2020
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Revised: 22 August 2020
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Accepted: 25 August 2020
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Published: 31 August 2020
(This article belongs to the Special Issue Optical Materials for White Light Emitting Diodes (WLEDs))
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.
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Keywords:
graphene; van der Waals epitaxy; III-nitrides
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MDPI and ACS Style
Chen, Q.; Yin, Y.; Ren, F.; Liang, M.; Yi, X.; Liu, Z. Van der Waals Epitaxy of III-Nitrides and Its Applications. Materials 2020, 13, 3835. https://doi.org/10.3390/ma13173835
AMA Style
Chen Q, Yin Y, Ren F, Liang M, Yi X, Liu Z. Van der Waals Epitaxy of III-Nitrides and Its Applications. Materials. 2020; 13(17):3835. https://doi.org/10.3390/ma13173835
Chicago/Turabian StyleChen, Qi, Yue Yin, Fang Ren, Meng Liang, Xiaoyan Yi, and Zhiqiang Liu. 2020. "Van der Waals Epitaxy of III-Nitrides and Its Applications" Materials 13, no. 17: 3835. https://doi.org/10.3390/ma13173835
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