Development and Optimization of High-Power Semiconductor Laser Diodes and Photodetectors
A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Lasers, Light Sources and Sensors".
Deadline for manuscript submissions: 20 May 2025 | Viewed by 94
Special Issue Editors
Interests: semiconductor laser diodes; T2SL detectors; quantum dot lasers and detectors; molecule beam epitaxy; antimony; infrared lasers and detectors
Special Issues, Collections and Topics in MDPI journals
Interests: epitaxial growth of compound semiconductors; design and fabrication of optoelectronic devices; applications of optoelectronic devices for imaging and sensing
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
In consideration of the high efficiency and highly integrated features, semiconductor laser diodes and detectors are all important optoelectronics devices, especially in sensing, computing, 6G, lidar, quantum technology, automatic pilot, advanced manufacturing and other industries.
The new generation of semiconductor laser and detectors is moving towards higher performance, lower power consumption, lower price, and new mechanisms for light generation and detection. This Special Issue will focus on high-power semiconductor laser diodes and photodetectors, including mechanisms, materials, processes, and applications of semiconductor laser diodes and detectors.
Potential topics include, but are not limited to, the following:
- Design of light emitting and detection;
- High-power laser diodes and detectors;
- Single-mode laser diodes;
- Tuneable laser and integrated laser devices;
- Cooled and uncooled detectors;
- Detectors with high operating temperature;
- Lasers and detectors based on quantum mechanism;
- Other semiconductor lasers and detectors.
Dr. Cheng-Ao Yang
Prof. Dr. Jiang Wu
Guest Editors
Manuscript Submission Information
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Keywords
- semiconductor laser
- laser diodes
- optoelectronics devices
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