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Photonics
Special Issues
Development and Optimization of High-Power Semiconductor Laser Diodes and Photodetectors
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Development and Optimization of High-Power Semiconductor Laser Diodes and Photodetectors

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Lasers, Light Sources and Sensors".

Deadline for manuscript submissions: 20 May 2025 | Viewed by 1642

Special Issue Editors

Dr. Cheng-Ao Yang

E-Mail Website
Guest Editor
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: semiconductor laser diodes; T2SL detectors; quantum dot lasers and detectors; molecule beam epitaxy; antimony; infrared lasers and detectors
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Jiang Wu

E-Mail Website
Guest Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China
Interests: epitaxial growth of compound semiconductors; design and fabrication of optoelectronic devices; applications of optoelectronic devices for imaging and sensing
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In consideration of the high efficiency and highly integrated features, semiconductor laser diodes and detectors are all important optoelectronics devices, especially in sensing, computing, 6G, lidar, quantum technology, automatic pilot, advanced manufacturing and other industries.

The new generation of semiconductor laser and detectors is moving towards higher performance, lower power consumption, lower price, and new mechanisms for light generation and detection. This Special Issue will focus on high-power semiconductor laser diodes and photodetectors, including mechanisms, materials, processes, and applications of semiconductor laser diodes and detectors.

Potential topics include, but are not limited to, the following:

  • Design of light emitting and detection;
  • High-power laser diodes and detectors;
  • Single-mode laser diodes;
  • Tuneable laser and integrated laser devices;
  • Cooled and uncooled detectors;
  • Detectors with high operating temperature;
  • Lasers and detectors based on quantum mechanism;
  • Other semiconductor lasers and detectors.

Dr. Cheng-Ao Yang
Prof. Dr. Jiang Wu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor laser
  • laser diodes
  • optoelectronics devices

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (3 papers)

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Research

10 pages, 1998 KiB  
Article
MEMS-Integrated Tunable Fabry–Pérot Microcavity for High-Quality Single-Photon Sources
by Ziyang Zheng, Jiawei Yang, Xuebin Peng and Ying Yu
Photonics 2025, 12(4), 315; https://doi.org/10.3390/photonics12040315 - 28 Mar 2025
Viewed by 312
Abstract
We propose a micro-electromechanical system (MEMS)-integrated Fabry–Pérot (F–P) microcavity designed for a tunable single-photon source based on a single semiconductor quantum dot (QD). Through theoretical simulations, our design achieved a Purcell factor of 23, a photon extraction efficiency exceeding 88%, and an optical [...] Read more.
We propose a micro-electromechanical system (MEMS)-integrated Fabry–Pérot (F–P) microcavity designed for a tunable single-photon source based on a single semiconductor quantum dot (QD). Through theoretical simulations, our design achieved a Purcell factor of 23, a photon extraction efficiency exceeding 88%, and an optical cavity mode tuning range of more than 30 nm. Experimentally, we fabricated initial device prototypes using a micro-transfer printing process and demonstrated a tuning range exceeding 15 nm. The device exhibits high mechanical stability, full reversibility, and minimal hysteresis, ensuring reliable operation over multiple tuning cycles. Our findings highlight the potential of MEMS-integrated F–P microcavities for scalable, tunable single-photon sources. Furthermore, reaching a strong coupling regime could enable efficient single-photon routing, opening new possibilities for integrated quantum photonic circuits. Full article
(This article belongs to the Special Issue Development and Optimization of High-Power Semiconductor Laser Diodes and Photodetectors)
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11 pages, 4192 KiB  
Article
Low-Dark-Current and Wide-Dynamic-Range InGaAs/InAlAs Avalanche Photodiodes with a Dual-Charge Layer
by Guohao Yang, Tianhong Liu, Jinping Li and Cunzhu Tong
Photonics 2025, 12(4), 312; https://doi.org/10.3390/photonics12040312 - 28 Mar 2025
Viewed by 237
Abstract
This study explores the impact of a dual-charge layer structure on the performance of InGaAs/InAlAs avalanche photodiodes (APDs) with a separate absorption, charge, multiplication, charge, and transit (SACMCT) structure. The dual-charge layer, consisting of p-doped and n-doped charge layers on either side of [...] Read more.
This study explores the impact of a dual-charge layer structure on the performance of InGaAs/InAlAs avalanche photodiodes (APDs) with a separate absorption, charge, multiplication, charge, and transit (SACMCT) structure. The dual-charge layer, consisting of p-doped and n-doped charge layers on either side of the avalanche layer, is designed to precisely control the internal electric field, effectively reduce the dark current, and extend the dynamic range. Simulation results guided the fabrication of a backside-illuminated APD, which achieved a linear operating range of 10–30 V and a dark current as low as 80 nA. The optimized design significantly reduced the dark current and increased the breakdown voltage compared to previously reported APDs. These improvements demonstrate the potential of dual-charge-layer APDs for high-speed optical communications and precision photodetection applications. Full article
(This article belongs to the Special Issue Development and Optimization of High-Power Semiconductor Laser Diodes and Photodetectors)
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9 pages, 2069 KiB  
Communication
Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
by Deyan Dai, Hanqing Liu, Xiangjun Shang, Shizhuo Tan, Qiaozhi Zhang, Chengao Yang, Dongwei Jiang, Xiangbin Su, Haiqiao Ni and Zhichuan Niu
Photonics 2025, 12(1), 62; https://doi.org/10.3390/photonics12010062 - 13 Jan 2025
Viewed by 805
Abstract
InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during the epitaxy, and the photoluminescence [...] Read more.
InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during the epitaxy, and the photoluminescence (PL) linewidth was significantly narrowed to 26.1 meV for the flushed sample and maintained to 27.3 meV for the unflushed sample. The flushed sample shows better device performance in threshold current (0.229 to 0.334 A at 15 °C), power (1.142 to 1.113 W at 15 °C), and characteristic temperature (51 to 39 K in the range of 55~80 °C) compared with the unflushed sample. Full article
(This article belongs to the Special Issue Development and Optimization of High-Power Semiconductor Laser Diodes and Photodetectors)
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