Advanced Inorganic Semiconductor Materials, 4th Edition

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: 31 July 2026 | Viewed by 1899

Special Issue Editors


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Guest Editor
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Miyagi 980-0845, Japan
Interests: thermoelectricity; artificial muscles; nanomechanics; first-principles calculations

Special Issue Information

Dear Colleagues,

Building upon the success of the first, second and third editions, which published over 30 papers, we continue on to the fourth edition. The information technology revolution has been based decisively on the development and application of inorganic semiconductors. Conventional devices utilize bulk semiconductors in which charge carriers are free to move in all three spatial directions. For example, silicon forms the basis of the vast majority of electronic devices, whilst compound semiconductors such as gallium arsenide (GaAs) are used for many optoelectronic applications. Recently, with the global boom in graphene research, more and more atomically thin two-dimensional (2D) inorganic materials have gained significant interest. Besides their promising applications in various ultrathin, transparent, and flexible nanodevices, 2D materials could also serve as one of the ideal models for establishing clear structure−property relationships in the field of solid-state physics and nanochemistry.

Despite the significant advances in the recent decade, both opportunities and challenges remain in this field. This Special Issue aims to highlight the most current research and ideas in inorganic semiconductors, especially semiconductors based on 2D materials. In this Special Issue, original research articles and reviews are welcome. Research areas include, but are not limited to, the experimental fabrication and characterization, as well as the electronic, electrical, magnetic, optoelectronic, and thermal properties of inorganic semiconductors.

As will be seen in this Special Issue, inorganic semiconductors exhibit a wide range of new and unusual properties, which can be employed to fabricate improved and novel electronic and electro-optical devices.

We look forward to receiving your contributions.

Dr. Sake Wang
Dr. Minglei Sun
Dr. Tuan-Hung Nguyen
Guest Editors

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Keywords

  • information technology
  • inorganic semiconductors
  • two-dimensional materials
  • graphene
  • transition-metal dichalcogenides
  • fabrication
  • characterization
  • electronic properties
  • optoelectronic properties
  • thermal properties

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Published Papers (2 papers)

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Research

17 pages, 10206 KB  
Article
Structural, Electronic, and Thermoelectric Insights into the Novel K2OsCl3Ag3 and Rb2OsCl3Ag3 Perovskites
by Nicholas O. Ongwen and Adel Bandar Alruqi
Inorganics 2026, 14(4), 102; https://doi.org/10.3390/inorganics14040102 - 1 Apr 2026
Viewed by 499
Abstract
The field of perovskites continues to advance each day, with new materials being discovered in order to eliminate the toxic and less efficient ones. Some of the challenges currently facing the perovskite industry include coming up with materials with higher electrical conductivity and [...] Read more.
The field of perovskites continues to advance each day, with new materials being discovered in order to eliminate the toxic and less efficient ones. Some of the challenges currently facing the perovskite industry include coming up with materials with higher electrical conductivity and lower thermal conductivity, as well as p-type semiconductors. In an attempt to address these challenges, this study modeled two novel perovskites from potassium hexachloroosmate (VI) (K2OsCl6) by replacing some of the chlorine atoms with those of silver, then characterized their structural, electronic (using both conventional and hybrid functionals), and thermoelectric properties using Quantum Espresso and BoltzTrap2 codes. The calculations were performed within the framework of density functional theory. The results showed that the novel materials exhibited higher density, lower thermal conductivity, lower band gaps, and positive Hall coefficient, unlike the K2OsCl6 sample. These materials can thus be used in areas such as in p–n junctions, thermoelectric devices, and optoelectronic devices. However, since this study was purely computational, the properties need to be verified through an experimental study. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 4th Edition)
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19 pages, 3156 KB  
Article
Effect of Mn Rate on Structural, Optical and Electrical Properties in LiCo1−xMnxO2 (x = 0.5; 0.7) Compounds
by Miftah Ali Bin Yazeed, Moufida Krimi, Abdulrahman Alsawi, Mohamed Houcine Dhaou, Abdelfattah Mahmoud and Abdallah Ben Rhaiem
Inorganics 2026, 14(1), 19; https://doi.org/10.3390/inorganics14010019 - 30 Dec 2025
Viewed by 683
Abstract
The compounds LiCo1−xMnxO2 (x = 0.5, 0.7) were synthesized via the solid-state method and exhibited crystallization in the cubic spinel structure (space group Fd-3m). UV–Vis spectroscopy reveals strong visible-light absorption and a reduction in the indirect optical band [...] Read more.
The compounds LiCo1−xMnxO2 (x = 0.5, 0.7) were synthesized via the solid-state method and exhibited crystallization in the cubic spinel structure (space group Fd-3m). UV–Vis spectroscopy reveals strong visible-light absorption and a reduction in the indirect optical band gap from 1.85 eV (x = 0.5) to 1.60 eV (x = 0.7) with increasing Mn content, which is consistent with semiconducting behavior. This narrowing arises from Mn3+/Mn4+ mixed valence, which introduces mid-gap states and enhances Co/Mn 3d–O 2p orbital hybridization within the spinel framework. In contrast, the Urbach energy increases from 0.55 eV to 0.65 eV, indicating greater structural and energetic disorder in the Mn-rich composition which is attributed to the Jahn–Teller distortions and valence heterogeneity associated with Mn3+. Impedance and dielectric modulus analyses confirm two distinct non-Debye relaxation processes related to grains and grain boundaries. AC conductivity is governed by the Correlated Barrier Hopping (CBH) model, with bipolaron hopping identified as the dominant conduction mechanism. The x = 0.7 sample displays significantly enhanced conductivity due to increased Mn3+/Mn4+ mixed valence, lattice expansion, efficient 3D electronic connectivity of the spinel lattice, and reduced interfacial resistance. These findings highlight the potential of these two spinels compounds as narrow-gap semiconductors for optoelectronic applications including visible-light photodetectors, photocatalysts, and solar absorber layers extending their utility beyond conventional battery cathodes. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 4th Edition)
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