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Open AccessArticle

AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering

Photonics Engineering Group, University of Alcalá, 28871 Alcalá de Henares, Spain
Thin Film and Microelectronics Group, University Complutense of Madrid, 28040 Madrid, Spain
Electronics and Semiconductors Group, Applied Physics Department, Universidad Autónoma de Madrid, 28049 Madrid, Spain
Author to whom correspondence should be addressed.
Materials 2020, 13(10), 2336;
Received: 17 April 2020 / Revised: 11 May 2020 / Accepted: 13 May 2020 / Published: 19 May 2020
(This article belongs to the Special Issue Advanced Materials for Photonics and Photovoltaics Applications)
We investigate the photovoltaic performance of solar cells based on n-AlxIn1−xN (x = 0–0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1−xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10−4–1 Ω·cm) while the residual carrier concentration drops from ~1021 to ~1019 cm−3. As a result, the top n-contact resistance varies from ≈10−1 to 1 MΩ for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm2 and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity. View Full-Text
Keywords: AlInN; silicon; sputtering; solar cells AlInN; silicon; sputtering; solar cells
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Valdueza-Felip, S.; Blasco, R.; Olea, J.; Díaz-Lobo, A.; Braña, A.F.; Naranjo, F.B. AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering. Materials 2020, 13, 2336.

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