- Article
Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices
- Jae-Hoon Yoo,
- Won-Ji Park,
- So-Won Kim,
- Ga-Ram Lee,
- Jong-Hwan Kim,
- Joung-Ho Lee,
- Sae-Hoon Uhm and
- Hee-Chul Lee
Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the cor...