The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitab...
The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence...
The anisotropic materials as the acoustic wave propagating medium introduce the dependence of the phase velocity on the wave propagation direction, as opposed to the isotropic counterparts; in addition, the profile of the particle displacement compon...
The crystallinity of cubic silicon carbide (3C-SiC) epilayers is improved through the use of a novel wafer bonding and regrowth technique resulting in a reduction in planar defects. The process involves the epitaxial growth of a 3–6 µm th...
We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are...
The nanocrystal 3C-SiC/ZrO2 bilayer films that could be used as the protective coatings of zirconium alloy fuel cladding were prepared on a single-crystal Si substrate. The corresponding nanocrystal 3C-SiC film and nanocrystal ZrO2 film were also div...
This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/...
The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literatu...
Changes in the atomic and electronic structure of silicon carbide 3C-SiC (β-SiC), resulting from lead adsorption, were studied within the density functional theory. The aim of the study was to analyze the main mechanisms occurring during the cor...
Silicon carbide (SiC) is an interesting semiconductor for MEMS devices. The high-value Young’s modulus of silicon carbide facilitates high frequencies and quality (Q) factors in resonant devices built with double-clamped beams. The aim of this...
In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the het...
Ciguatoxins (CTXs) stand as the primary toxins causing ciguatera fish poisoning (CFP) and are essential compounds distinguished by their characteristic polycyclic ether structure. In a previous report, we identified the structures of product ions gen...
In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were gro...
Machining of brittle ceramics is a challenging task because the requirements on the cutting tools are extremely high and the quality of the machined surface strongly depends on the chosen process parameters. Typically, the efficiency of a machining p...
First-principles calculations were employed to study the solution and diffusion properties of hydrogen (H) at the Si-rich and C-rich
The semaphorins represent a large family of signaling molecules with crucial roles in neuronal and cardiac development. While normal semaphorin function pertains largely to development, their involvement in malignancy is becoming increasingly evident...
In this work, the structure and stability of partial dislocation (PD) complexes terminating double and triple stacking faults in 3C-SiC are studied by molecular dynamics simulations. The stability of PD complexes is demonstrated to depend primarily o...
Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices. The existence of stacking faults, whic...
This work is devoted to multi-frequency studying of the blazar 3C 454.3. The study includes spectroscopic and photometric observations in the optical, IR, and gamma-ray bands. We investigate whether a correlation exists in the light curves at differe...
Fengyun-3C (FY-3C) is a second-generation meteorological satellite of China that was launched on 23 September 2013. The on board Visible and Infrared Radiometer (VIRR) can be used to observe global sea surface temperature (SST). In this paper, the VI...
We demonstrate the growth of 3C-SiC with reduced planar defects on a micro-scale compliant substrate. Heteroepitaxial growth of 3C-SiC on trenches with a width and separation of 2 µm, etched into a Si(001) substrate, is found to suppress defect...
An in-situ, catalyst-free method for synthesizing 3C-SiC ceramic nanowires (SiCNWs) inside carbon–carbon (C/C) composites was successfully achieved. Obtained samples in different stages were characterized by X-ray diffraction (XRD), scanning el...
Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on...
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser ch...
Neurodevelopmental programs are frequently dysregulated in cancer. Semaphorins are a large family of guidance cues that direct neuronal network formation and are also implicated in cancer. Semaphorins have two kinds of receptors, neuropilins and plex...
This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytyp...
Single-crystal silicon carbide (SiC) is widely used because of its excellent properties. However, SiC is a typical hard and brittle material, and there are many challenges in realizing its high efficiency and high-precision machining. Grinding is the...
3C-SiC is a promising material for low-voltage power electronic devices but its growth is still challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable method to achieve high crystalline quality, minimizing the eff...
Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for op...
In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported. Open-loop resonance measurements are performed on the vacuum...
In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further induc...
Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of...
We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to...
Wide bandgap semiconductors doped with transition metals are attracting significant attention in the fabrication of dilute magnetic semiconductor devices (DMSs). The working principle of DMSs is based on the manipulation of the electron spin, which i...
The visible and infrared scanning radiometer (VIRR) onboard the Fengyun-3C (FY-3C) meteorological satellite has 11 μm and 12 μm channels, which are capable of sea surface temperature (SST) observations. This study is based on atmospheric radiat...
Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO2 interlayer...
This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si...
Fengyun-3C (FY-3C) is the first Chinese satellite that is capable of using the Radio Occultation (RO) technique to retrieve atmospheric profiles. This research evaluates the quality of FY-3C RO profiles including refractivity, temperature, and specif...
First-principles calculations based on density functional theory (DFT) are performed to investigate the interfacial properties and fracture behavior of 3C-SiC(111)/Al(111) and 4H-SiC(0001)/Al(111) interfaces. To mitigate surface effects through adequ...
As an important reinforcement for metal matrix composites, the microstructure and mechanical properties of W-core SiC filament have drawn increasing attentions among researchers. In this work, the growth behavior of polycrystalline 3C-SiC on W-wire s...
Estrogen receptor positive (ER+) breast cancer (BCa) accounts for the highest proportion of breast cancer-related deaths. While endocrine therapy is highly effective for this subpopulation, endocrine resistance remains a major challenge and the ident...
The Surface Water and Ocean Topography (SWOT) mission was launched on 16 December 2022 to measure water levels over both open ocean and inland waters. To achieve these objectives, the SWOT Payload contains an innovative Ka-band radar interferometer,...
Fengyun-3C (FY-3C) is a Global Navigation Satellite Systems (GNSS) Radio Occultation (RO) mission founded which was by China on 23 September 2013. In this study, under a specific temporal and spatial domain, we systematically compare FY-3C refractivi...
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this ma...
An accurate inversion of the fraction of absorbed photosynthetically active radiation (FPAR) based on remote sensing data is particularly important for understanding global climate change. At present, there are relatively few studies focusing on the...
The deformed wing virus (DWV) belongs to the genus Iflavirus and the family Iflaviridae within the order Picornavirales. It is an important pathogen of the Western honey bee, Apis mellifera, causing major losses among honey bee colonies in associatio...
The 3C120 (Mrk 1506, UGC 03087, Mrk 9014) is a type 1 Seyfert (Sy1)/broad-line radio galaxy (BLRG) with intriguing variable jet activity featuring “dip” and “outburst” phases. Significant X-ray observational datasets have been collected for 3C120 by...
In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels. With an increase in the sou...
In this study, we grew homoepitaxial layers on 3-inch on-axis carbon-face 4H-silicon carbide substrates and attempted to suppress the generation of 3C-inclusions. It was found that the 3C-inclusion density decreased with increasing time spent on reac...
The state-of-art global navigation satellite system (GNSS) occultation sounder (GNOS) onboard the FengYun 3 series C satellite (FY-3C) has been in operation for more than five years. The accumulation of FY-3C GNOS atmospheric data makes it ready to b...
of 5,018