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In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

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State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China
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School of Optical and Electronic Information, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Wuhan 430070, China
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Materials Science and Engineering, Wuhan University of Technollogy, 122 Luoshi Road, Wuhan 430070, China
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R & D, Ibiden Co., Ltd., 1-1 Kitagata, Ibigawa-cho, Ibi-gun, Gifu 501-0695, Japan
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New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
*
Author to whom correspondence should be addressed.
Materials 2020, 13(2), 410; https://doi.org/10.3390/ma13020410
Received: 9 December 2019 / Revised: 8 January 2020 / Accepted: 9 January 2020 / Published: 15 January 2020
(This article belongs to the Special Issue Smart Materials for Micro Electro Mechanical Systems (MEMS))
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field. View Full-Text
Keywords: N-doped &lt; 110&gt; -oriented 3C-SiC bulk; preferred orientation; conductive SiC; halide laser CVD N-doped <; 110>; -oriented 3C-SiC bulk; preferred orientation; conductive SiC; halide laser CVD
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MDPI and ACS Style

Lai, Y.; Xia, L.; Xu, Q.; Li, Q.; Liu, K.; Yang, M.; Zhang, S.; Han, M.; Goto, T.; Zhang, L.; Tu, R. In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition. Materials 2020, 13, 410.

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