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In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China
School of Optical and Electronic Information, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Wuhan 430070, China
Materials Science and Engineering, Wuhan University of Technollogy, 122 Luoshi Road, Wuhan 430070, China
R & D, Ibiden Co., Ltd., 1-1 Kitagata, Ibigawa-cho, Ibi-gun, Gifu 501-0695, Japan
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
Author to whom correspondence should be addressed.
Materials 2020, 13(2), 410;
Received: 9 December 2019 / Revised: 8 January 2020 / Accepted: 9 January 2020 / Published: 15 January 2020
(This article belongs to the Special Issue Smart Materials for Micro Electro Mechanical Systems (MEMS))
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field. View Full-Text
Keywords: N-doped &lt; 110&gt; -oriented 3C-SiC bulk; preferred orientation; conductive SiC; halide laser CVD N-doped <; 110>; -oriented 3C-SiC bulk; preferred orientation; conductive SiC; halide laser CVD
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Lai, Y.; Xia, L.; Xu, Q.; Li, Q.; Liu, K.; Yang, M.; Zhang, S.; Han, M.; Goto, T.; Zhang, L.; Tu, R. In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition. Materials 2020, 13, 410.

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