Fundamentals and Recent Advances in Epitaxial Graphene on SiC

Dear Colleagues,

We are calling for full research articles and review papers for a forthcoming special issue of “Fundamentals and Recent Advances in Epitaxial Graphene on SiC ” dedicated to the broad topics of epitaxial graphene growth, post-growth treatment and its applications in electronics, sensorics and metrology. From a practical point of view, Epitaxial Graphene is the most promising representative of graphene family materials due to its outstanding thermal conductivity, chemical stability, electronic and quantum-mechanical properties. Unique growth mechanisms behind epitaxial graphene formation make it possible to achieve large-area and high-quality of the graphene layers supported by SiC with high thickness homogeneity and high carrier mobility. Intercalation of epitaxial graphene with non-metallic and metallic species enables its conversion to quasi-freestanding crystal, significantly extending its functionality towards more efficient electronic devices and sensors. However, despite huge recent progress towards exploiting the unusual physical phenomena related to epitaxial graphene in realistic applications, there are still a lot of challenges that must be addressed. This Special Issue will cover recent advances in material synthesis, in-depth characterization and theoretical modeling of epitaxial graphene grown on different polytypes of SiC. The special issue is focusing on the phenomena and processes underlying growth and intercalation mechanisms, physical properties and device performance. Advances in metrology are appreciated. To extend the range of applications towards energy related applications, insights into electrochemistry of epitaxial graphene will be also brought to the readers’ attention. The submission of comprehensive review papers aiming to systemize knowledge on epitaxial graphene fundamental physics is specially encouraged.

Prof. Dr. Rositsa Yakimova
Dr. Ivan Shtepliuk
Guest Editors

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