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Open AccessArticle

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

1
CNR-IMM, V. S.Sofia 64, 95129 Catania, Italy
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Savoie Technolac-Arche Bat.4, Allée du Lac d’Aiguebelette, BP 267, 73375 Le Bourget du Lac CEDEX, France
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CNR-IMM, Zona Industriale VIII Strada 5, 95121 Catania, Italy
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STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy
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CNR-IMM, Via Gobetti 101, I-40129 Bologna, Italy
*
Author to whom correspondence should be addressed.
Materials 2019, 12(20), 3407; https://doi.org/10.3390/ma12203407
Received: 21 September 2019 / Revised: 14 October 2019 / Accepted: 16 October 2019 / Published: 18 October 2019
This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We investigated the effect of the size of the inverted pyramid on the epilayer quality. We noted that anti-phase boundaries (APBs) develop between adjacent faces of the pyramid and that the SiC/Si interfaces have the same polarity on both pyramid faces. The structure of the heterointerface was investigated. Moreover, due to the emergence of APB at the vertex of the pyramid, voids buried on the epilayer form. We demonstrated that careful control of the growth parameters allows modification of the height of the void and the density of APBs, improving SiC epitaxy quality. View Full-Text
Keywords: 3C-SiC; ISP; compliant substrate; stacking faults; anti-phase boundary; heteroepitaxy; growth rate; STEM; micro Raman; SEM 3C-SiC; ISP; compliant substrate; stacking faults; anti-phase boundary; heteroepitaxy; growth rate; STEM; micro Raman; SEM
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MDPI and ACS Style

Zimbone, M.; Zielinski, M.; Bongiorno, C.; Calabretta, C.; Anzalone, R.; Scalese, S.; Fisicaro, G.; La Magna, A.; Mancarella, F.; La Via, F. 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate. Materials 2019, 12, 3407.

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