Suppression of 3C-Inclusion Formation during Growth of  4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

Masumoto, Keiko; Asamizu, Hirokuni; Tamura, Kentaro; Kudou, Chiaki; Nishio, Johji; Kojima, Kazutoshi; Ohno, Toshiyuki; Okumura, Hajime

doi:10.3390/ma7107010

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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

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Partnership for Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

National Institute of Advanced Industrial Science and Technology, Central 2 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

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Panasonic Corporation, 800 Higashiyama, Uozu, Toyama 937-8585, Japan

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Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai, Kawasaki, Kanagawa 212-8582, Japan

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Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

Author to whom correspondence should be addressed.

Materials 2014, 7(10), 7010-7021; https://doi.org/10.3390/ma7107010

Received: 31 July 2014 / Revised: 18 September 2014 / Accepted: 30 September 2014 / Published: 17 October 2014

(This article belongs to the Special Issue Compound Semiconductor Materials 2014)

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Abstract

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during epitaxial growth. 3C-SiC nucleation is proposed to trigger the formation of 3C inclusions. We suppressed 3C-inclusion formation by performing deep in situ etching and using a high C/Si ratio, which removed substrate surface damage and improved the 4H-SiC stability, respectively. The as-grown epitaxial layers had rough surfaces because of step bunching due to the deep in situ etching, but the rough surface became smooth after chemical mechanical polishing treatment. These techniques allow the growth of epitaxial layers with 1° off-angles for a wide range of doping concentrations. View Full-Text

Keywords: silicon carbide; epitaxial growth; low off-angle; 3C inclusion; in situ etching; C/Si ratio

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MDPI and ACS Style

Masumoto, K.; Asamizu, H.; Tamura, K.; Kudou, C.; Nishio, J.; Kojima, K.; Ohno, T.; Okumura, H. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle. Materials 2014, 7, 7010-7021. https://doi.org/10.3390/ma7107010

AMA Style

Masumoto K, Asamizu H, Tamura K, Kudou C, Nishio J, Kojima K, Ohno T, Okumura H. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle. Materials. 2014; 7(10):7010-7021. https://doi.org/10.3390/ma7107010

Chicago/Turabian Style

Masumoto, Keiko, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, and Hajime Okumura. 2014. "Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle" Materials 7, no. 10: 7010-7021. https://doi.org/10.3390/ma7107010

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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

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