Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
Masumoto, K.; Asamizu, H.; Tamura, K.; Kudou, C.; Nishio, J.; Kojima, K.; Ohno, T.; Okumura, H. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle. Materials 2014, 7, 7010-7021. https://doi.org/10.3390/ma7107010
Masumoto K, Asamizu H, Tamura K, Kudou C, Nishio J, Kojima K, Ohno T, Okumura H. Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle. Materials. 2014; 7(10):7010-7021. https://doi.org/10.3390/ma7107010
Chicago/Turabian StyleMasumoto, Keiko, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, and Hajime Okumura. 2014. "Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle" Materials 7, no. 10: 7010-7021. https://doi.org/10.3390/ma7107010