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Crystals 2019, 9(2), 115;

Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
Ioffe Institute, St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin), St. Petersburg 197376, Russia
Peter the Great St. Petersburg State Polytechnic University, St. Petersburg 195251, Russia
Laboratory of Mechanic and Energy Systems, ITMO University, St. Petersburg 197101, Russia
Author to whom correspondence should be addressed.
Received: 21 January 2019 / Revised: 20 February 2019 / Accepted: 20 February 2019 / Published: 22 February 2019
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based Devices)
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The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes. View Full-Text
Keywords: sublimation epitaxy; 3C-SiC; proton irradiation; structural defects; photoluminescence; Hall effect; Raman spectroscopy sublimation epitaxy; 3C-SiC; proton irradiation; structural defects; photoluminescence; Hall effect; Raman spectroscopy

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Lebedev, A.; Oganesyan, G.; Kozlovski, V.; Eliseyev, I.; Bulat, P. Radiation Defects in Heterostructures 3C-SiC/4H-SiC. Crystals 2019, 9, 115.

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