Radiation Defects in Heterostructures 3C-SiC/4H-SiC
AbstractThe effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes. View Full-Text
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Lebedev, A.; Oganesyan, G.; Kozlovski, V.; Eliseyev, I.; Bulat, P. Radiation Defects in Heterostructures 3C-SiC/4H-SiC. Crystals 2019, 9, 115.
Lebedev A, Oganesyan G, Kozlovski V, Eliseyev I, Bulat P. Radiation Defects in Heterostructures 3C-SiC/4H-SiC. Crystals. 2019; 9(2):115.Chicago/Turabian Style
Lebedev, A.A.; Oganesyan, G.A.; Kozlovski, V.V.; Eliseyev, I.A.; Bulat, P.V. 2019. "Radiation Defects in Heterostructures 3C-SiC/4H-SiC." Crystals 9, no. 2: 115.
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