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Radiation Defects in Heterostructures 3C-SiC/4H-SiC

1
Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
2
Ioffe Institute, St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin), St. Petersburg 197376, Russia
3
Peter the Great St. Petersburg State Polytechnic University, St. Petersburg 195251, Russia
4
Laboratory of Mechanic and Energy Systems, ITMO University, St. Petersburg 197101, Russia
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(2), 115; https://doi.org/10.3390/cryst9020115
Received: 21 January 2019 / Revised: 20 February 2019 / Accepted: 20 February 2019 / Published: 22 February 2019
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based devices)
The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes. View Full-Text
Keywords: sublimation epitaxy; 3C-SiC; proton irradiation; structural defects; photoluminescence; Hall effect; Raman spectroscopy sublimation epitaxy; 3C-SiC; proton irradiation; structural defects; photoluminescence; Hall effect; Raman spectroscopy
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MDPI and ACS Style

Lebedev, A.; Oganesyan, G.; Kozlovski, V.; Eliseyev, I.; Bulat, P. Radiation Defects in Heterostructures 3C-SiC/4H-SiC. Crystals 2019, 9, 115.

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