Special Issue "Development and Investigation of SiC and SiC-based devices"

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (1 May 2020).

Special Issue Editor

Prof. Dr. Alexander A. Lebedev
Website
Guest Editor
Ioffe Institute, Saint Petersburg (ex Leningrad), Russian Federation
Interests: silicon carbide; bulk crystals; polytypes; high-voltage power diodes; high-voltage subnanosecond pulsed diodes; thyristors, bipolar transistors; spin, sensorics; magnetic field; EPR; ODMR; graphene

Special Issue Information

Dear Colleagues,

It is known that silicon carbide (SiC) is a very promising material in terms of creating various types of devices. The advances in technology development over the past 20 years have made it possible to obtain, on the basis of SiC, devices that have previously made predictons about the potential of the material in the field of switching the power density and high operating temperatures.
The unique quantum properties of color centers in silicon carbide have allowed us to adopt a new role for silicon carbide as a flexible and practical platform for the development of modern quantum technologies. Atomic-sized color centers in bulk and nanocrystalline SiC are promising systems for spintronics, photonics compatible with the transparency band of fiber optics and living systems, quantum information processing, and environmental sensing.
Another new application of SiC crystals is their use for the growth of graphene films.
We invite investigators to submit papers that discuss the physical properties of SiC and the development of any types of SiC based devices. Potential topics include, but, again, are not limited to, the following:

  • Growth of bulk crystals of high-quality silicon carbide, both pure and doped, with impurities and enriched with its own isotopes;
  • Study of the possibility of controlled growth of various polytypes of silicon carbide and the heterojunctions between them;
  • Verification of the compliance of the radiation resistance of SiC and of devices based on it, with the existing theoretical expectations;
  • Data on the development and research of high-voltage diodes for power and short-pulse electronics;
  • Consideration of the phenomena common to all bipolar devices based on silicon carbide: electron-hole scattering, the problem of an effective emitter, and fundamental physical limitations on the limiting blocked voltage and limiting current densities;
  • Possibilities of high-temperature optical spin manipulations, both on spin ensembles and on single spins, in bulk and nanocrystalline SiC;
  • Technology of the growth of graphene films using the method of thermal decomposition of the surface of SiC single crystals.

Prof. Dr. Alexander A. Lebedev
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon carbide
  • bulk crystals
  • polytypes
  • high-voltage power diodes
  • high-voltage subnanosecond pulsed diodes
  • thyristors, bipolar transistors
  • spin, sensorics
  • magnetic field
  • EPR
  • ODMR
  • graphene

Published Papers (3 papers)

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Research

Open AccessArticle
Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
Crystals 2020, 10(5), 417; https://doi.org/10.3390/cryst10050417 - 23 May 2020
Abstract
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a crucial threat to the device’s [...] Read more.
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a crucial threat to the device’s reliability. In this work, we explore the possibility of using a SiC planar IGBT structure to approach high performance to the level of a SiC trench IGBT, without suffering the high gate oxide field. The proposed SiC planar IGBT features buried p-layers directly under the p-bodies, and thus can be formed using the same mask set. The region between the buried p-layer and the p-body is heavily doped with n-type dopants so that the conductivity modulation is improved. Comprehensive TCAD simulations have been carried out to verify this concept, and the simulation results show the new SiC planar IGBT exhibits a high performance comparable to the trench IGBT, and also exhibits a low gate oxide field. Full article
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based devices)
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Open AccessArticle
Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes
Crystals 2019, 9(7), 328; https://doi.org/10.3390/cryst9070328 - 27 Jun 2019
Abstract
We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy [...] Read more.
We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects. Full article
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based devices)
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Open AccessArticle
Radiation Defects in Heterostructures 3C-SiC/4H-SiC
Crystals 2019, 9(2), 115; https://doi.org/10.3390/cryst9020115 - 22 Feb 2019
Cited by 1
Abstract
The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found [...] Read more.
The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes. Full article
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based devices)
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