Special Issue "Development and Investigation of SiC and SiC-based devices"
Deadline for manuscript submissions: closed (1 May 2020).
Interests: silicon carbide; bulk crystals; polytypes; high-voltage power diodes; high-voltage subnanosecond pulsed diodes; thyristors, bipolar transistors; spin, sensorics; magnetic field; EPR; ODMR; graphene
It is known that silicon carbide (SiC) is a very promising material in terms of creating various types of devices. The advances in technology development over the past 20 years have made it possible to obtain, on the basis of SiC, devices that have previously made predictons about the potential of the material in the field of switching the power density and high operating temperatures.
The unique quantum properties of color centers in silicon carbide have allowed us to adopt a new role for silicon carbide as a flexible and practical platform for the development of modern quantum technologies. Atomic-sized color centers in bulk and nanocrystalline SiC are promising systems for spintronics, photonics compatible with the transparency band of fiber optics and living systems, quantum information processing, and environmental sensing.
Another new application of SiC crystals is their use for the growth of graphene films.
We invite investigators to submit papers that discuss the physical properties of SiC and the development of any types of SiC based devices. Potential topics include, but, again, are not limited to, the following:
- Growth of bulk crystals of high-quality silicon carbide, both pure and doped, with impurities and enriched with its own isotopes;
- Study of the possibility of controlled growth of various polytypes of silicon carbide and the heterojunctions between them;
- Verification of the compliance of the radiation resistance of SiC and of devices based on it, with the existing theoretical expectations;
- Data on the development and research of high-voltage diodes for power and short-pulse electronics;
- Consideration of the phenomena common to all bipolar devices based on silicon carbide: electron-hole scattering, the problem of an effective emitter, and fundamental physical limitations on the limiting blocked voltage and limiting current densities;
- Possibilities of high-temperature optical spin manipulations, both on spin ensembles and on single spins, in bulk and nanocrystalline SiC;
- Technology of the growth of graphene films using the method of thermal decomposition of the surface of SiC single crystals.
Prof. Dr. Alexander A. Lebedev
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- silicon carbide
- bulk crystals
- high-voltage power diodes
- high-voltage subnanosecond pulsed diodes
- thyristors, bipolar transistors
- spin, sensorics
- magnetic field