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Open AccessArticle

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

1
Institute for Physics of Microstructures, Russian Academy of Science, Nizhni Novgorod 603950, Russia
2
Institute of Physical - Chemical Technology & Material Sciences, Alexeev Nizni Novgorod State Technical University, Nizhni Novgorod 603950, Russia
3
Rzhanov Institute of Semiconductor Physics, Sibirian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
4
Mera NN, Nizhni Novgorod 603950, Russia
5
Institute of Solid State Physics, Russian Academy of Science, Chernogolovka, Moscow distr. 142432, Russia
6
Chair of Informatic & Information Technology, Russian Presidential Academy of National Economy and Public Administration, Nizhni Novgorod 603950, Russia
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(6), 491; https://doi.org/10.3390/cryst10060491
Received: 12 April 2020 / Revised: 3 June 2020 / Accepted: 3 June 2020 / Published: 7 June 2020
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based devices)
Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of the 3C-SiC films were tested using X-ray diffraction, second ion mass spectrometry, scanning ion and electron microscopy, photo- and cathode luminescence. It was demonstrated that the fine crystal structure of the 3C-SiC islands was formed by the close-packed nanometer-size grains and precipitated on the underlying solid carbonized Si layer. Luminescence spectral lines of the solid carbonized Si layer, separated island and solid textured 3C-SiC layer were shifted toward the high ultraviolet range. The spectra measured by different methods were compared and the nature of the revealed lines was considered. This article discusses a quantum confinement effect observation in the 3C-SiC nanostructures and a perspective for the use of nanotextured island 3C-SiC layers as a two-dimensional surface quantum superlattice for high-frequency applications. The conductivity anisotropy and current-voltage characteristics of the two-dimensional superlattices with a non-additive electron dispersion law in the presence of a strong electric field were studied theoretically. Main efforts were focused on a search of the mechanisms allowing realization of the high-frequency negative dynamical conductivity for the structures having a positive static differential conductivity. View Full-Text
Keywords: gas phase epitaxy; hydric compounds; 3C-SiC layers; growth stages; luminescence; quantization; superlattice gas phase epitaxy; hydric compounds; 3C-SiC layers; growth stages; luminescence; quantization; superlattice
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Orlov, L.K.; Vdovin, V.I.; Ivina, N.L.; Steinman, E.A.; Drozdov, Y.N.; Orlov, M.L. Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds. Crystals 2020, 10, 491.

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