The commonly-employed methylammonium-based perovskites are environmentally unstable, which limits their commercialization. To resolve this problem, a stable hybrid perovskite, pyrrolidinium lead iodide (PyPbI3), was synthesized successfully via a sim...
Isotropic TFT characteristics are realized in the {100}-oriented grain-boundary-free 60 nm thick Si film obtained by the continuous-wave laser lateral crystallization, where the grain- and sub-boundaries are defined as the crystallographic boundaries...
The interface and bulk trap densities were separately extracted from self-aligned top-gate (SA-TG) coplanar indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using the low-frequency capacitance–voltage (C–V) characteristics and space-char...
Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temp...
We experimentally extracted the positive bias temperature stress (PBTS)-induced trapped electron distribution within the gate dielectric in self-aligned top-gate (SA-TG) coplanar indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) using the...
The photocurrent for poly(4-(dimethylamino)benzyl acrylate) (PDAA) photorefractive composites with (4-(diphenylamino)phenyl)methanol (TPAOH) photoconductive plasticizers was measured to be two orders of magnitude higher than that obtained with (2,4,6...
The properties of metal-oxide semiconductor (MOS) capacitors with different chemical treatments have been examined in this study. A MOS capacitor consists of an Al2O3/n-GaN/AlN buffer/Si substrate. Four chemical treatments, containing organic solvent...
The size-dependent photoluminescence (PL) blue shift in organometal halide perovskite nanoparticles has traditionally been attributed to quantum confinement effects (QCEs), irrespective of nanoparticle size. However, this interpretation lacks rigor f...
The transient dynamics of photocurrents for poly((4-diphenylamino)benzyl acrylate) (PDAA)-based photorefractive (PR) polymers sensitized with perylene bisimide derivative N,N′-diisopropylphenyl-1,6,7,12-tetrachloroperylene-3,4,9,10-tetracarboxy...
Graphene-quantum dot nanocomposites attract significant attention for novel optoelectronic devices, such as ultrafast photodetectors and third-generation solar cells. Combining the remarkable optical properties of quantum dots (QDs) with the exceptio...
As a strong competitor in the field of optoelectronic applications, organic-inorganic metal hybrid perovskites have been paid much attention because of their superior characteristics, which include broad absorption from visible to near-infrared regio...
Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices...
Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, ha...
The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization i...
Trap density refers to the density of electronic trap states within dielectric materials that can capture and release charge carriers (electrons or holes) in a semiconductor channel, affecting the transistor’s performance. This study aims to in...
In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation...
Estimates of absolute pest population density are critical to pest management programs but have been difficult to obtain from capture numbers in pheromone-baited monitoring traps. In this paper, we establish a novel predictive relationship for a prob...
Camera traps and drone surveys both leverage advancing technologies to study dynamic wildlife populations with little disturbance. Both techniques entail strengths and weaknesses, and common camera trap methods can be confounded by unrealistic assump...
The model of multiple trapping into energy-distributed states is a successful tool to describe the transport of nonequilibrium charge carriers in amorphous semiconductors. Under certain conditions, the model leads to anomalous diffusion equations tha...
Providing ideal conditions for the study of ion-neutral collisions, we investigate here the properties of the saturated, steady state of a three-dimensional Paul trap, loaded from a magneto-optic trap. In particular, we study three assumptions that a...
Solar energy conversion into chemical form is possible using artificial means. One example of a highly-efficient fuel is solar energy used to split water into oxygen and hydrogen. Efficient photocatalytic water-splitting remains an open challenge for...
In this study, the impact of the type of ligand at the surface of colloidal CdSe@CdS dot-in-rod nanostructures on the basic exciton relaxation and charge localization processes is closely examined. These systems have been introduced into the field of...
In this paper, the magic wavelength of the 87Sr optical lattice clock is determined by a method that bypasses the need for lattice trap depth modulation. Instead, it relies on an additional AC Stark shift generated by a dipole beam operating nea...
Globally, environmental impacts and insecticide resistance are forcing pest control organizations to adopt eco-friendly and insecticide-free alternatives to reduce the risk of mosquito-borne diseases, which affect millions of people, such as dengue,...
Three-dimensional bulk fin-type field-effect transistors (FinFETs) have been the dominant devices since the sub-22 nm technology node. Electrical characteristics of scaled devices suffer from different process variation effects. Owing to the trapping...
To avoid hydrogen flaking in rail production, it is of crucial importance to understand the differences in hydrogen diffusion and trapping between different production steps. Therefore, as-cast unfinished material was compared with two finished rails...
In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout). The short-circuit current density (JSC) and open-circui...
In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an...
The most widely used nanowire channel architecture for creating state-of-the-art high-performance transistors is the nanowire wrap-gate transistor, which offers low power consumption, high carrier mobility, large electrostatic control, and high-speed...
A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias condit...
In this study, we investigate the impact of rising time on alternating current (AC) stress-induced degradation in amorphous indium–tin–gallium–zinc oxide (a-ITGZO) TFTs through both experiments and simulations. When AC bias stresses...
Undoped SrAl2O4 nanocrystals were obtained via solution combustion using urea as fuel. The afterglow properties of undoped SrAl2O4 were investigated. Green afterglow from undoped SrAl2O4 is visible to the human eye when the 325 nm irradiation of a he...
4H-silicon carbide metal-oxide-semiconductor field-effect transistors (4H-SiC MOSFETs) show 1/f low-frequency noise behavior. In this paper, this can be explained by the combination of the mobility fluctuation (Δμ) and the carrier number flu...
The lifetimes of nS1/2 and nD5/2 (n = 60–83) cesium Rydberg states are measured accurately in a magneto-optical trap using the field ionization technique and analyzed with the existing theoretical model. The room temperature blackbody radiation...
The emerald ash borer (EAB), Agrilus planipennis Fairmaire, is an invasive forest pest that is causing a rapid decline in ash (Fraxinus spp.). As EABs spread across North America to 35 U.S. states and 5 Canadian provinces, detection of the pest has p...
In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron tr...
Since its introduction into the USA, the spotted lanternfly (SLF), Lycorma delicatula, (White) (Hemiptera: Fulgoridae) has spread across the landscape relatively unchecked. With a wide host range, it is considered a serious pest of native forest spec...
A dye-sensitized solar cell (DSC) is the third generation of solar technology, utilizing TiO2 nanoparticles with sizes of 20–30 nm as the photoelectrode material. The integration of smaller nanoparticles has the advantage of providing a larger...
Important metapopulation dynamics are disrupted by factors such as habitat loss, climate change, and human-induced mortality, culminating in isolated wildlife populations and threatening species survival. Source populations, where birth rates exceed...
Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct curren...
We report new accurate measurements of the drift mobility μ of quasifree electrons in moderately dense helium gas in the temperature range 26K≤T≤300K for densities lower than those at which states of electrons localized in bubbles appear. By heuristi...
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/fγ noise power spectral density...
In this work, we analyze a resistive switching random access memory (RRAM) device with the metal–insulator–metal structure of Al/αTiOx/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction...
Theoretical predictions as well as experiments performed at storage rings have shown that the lifetimes of β-radionuclides can change significantly as a function of the ionization state. In this paper we describe an innovative approach, based on...
To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film...
Charging and discharge currents measured in low-density polyethylene (LDPE) and LDPE/Al2O3 nanocomposite are analyzed. The experiments were conducted at temperatures of 40–80 °C utilizing a consecutive charging–discharging procedure,...
Coherence is associated with transient quantum states; in contrast, equilibrium thermal quantum systems have no coherence. We investigate the quantum control task of generating maximum coherence from an initial thermal state employing an external fie...
We have investigated the effect of electron effective mass (me*) and tail acceptor-like edge traps density (NTA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the...
There have been significant differences in principle electrical parameters between amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and silicon-based devices for their distinct conduction mechanisms. Additionally, threshold voltage is...
The Scher–Montroll model successfully describes subdiffusive photocurrents in homogeneously disordered semiconductors. The present paper generalizes this model to the case of fractal spatial disorder (self-similar random distribution of localiz...
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