Next Article in Journal
Rapid Design and Analysis of Microtube Pneumatic Actuators Using Line-Segment and Multi-Segment Euler–Bernoulli Beam Models
Next Article in Special Issue
Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss
Previous Article in Journal
Dynamics Behaviors of Droplet on Hydrophobic Surfaces Driven by Electric Field
Previous Article in Special Issue
Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining
Open AccessArticle

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(11), 779; https://doi.org/10.3390/mi10110779
Received: 17 October 2019 / Revised: 11 November 2019 / Accepted: 11 November 2019 / Published: 14 November 2019
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film (buried-channel layer), and a nitrogen-doped a-IGZO film (back-channel layer). The larger field-effect mobility (5.8 cm2V−1s−1), the smaller subthreshold swing value (0.8 V/dec, and the better stability (smaller threshold voltage shifts during bias-stress and light illumination tests) were obtained for the buried-channel device relative to the conventional a-IGZO TFT. The specially designed channel-layer structure resulted in multiple conduction channels and hence large field-effect mobility. The in situ nitrogen-doping caused reductions in both the front-channel interface trap density and the density of deep states in the bulk channel layers, leading to a small subthreshold swing value. The better stability properties may be related to both the reduced trap states by nitrogen-doping and the passivation effect of the nitrogen-doped a-IGZO films at the device back channels. View Full-Text
Keywords: amorphous InGaZnO; thin-film transistor; nitrogen-doping; buried-channel; stability amorphous InGaZnO; thin-film transistor; nitrogen-doping; buried-channel; stability
Show Figures

Figure 1

MDPI and ACS Style

Zhang, Y.; Xie, H.; Dong, C. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers. Micromachines 2019, 10, 779.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop