Search Results (1,917)

A new selective fluorescent probe based on a vitamin B₆ derived hydrazone was synthesized and characterized for the detection of Al³⁺ and Ga³⁺ ions. The probe’s selectivity and sensitivity were evaluated using UV-Vis, fluorescence, and NMR spectroscopy in a buffered DMSO/water solution, complemented by density functional theory (DFT) calculations to elucidate the electronic structure and coordination modes of the resulting complexes. The probe exhibited a notable “turn-on” fluorescence response upon binding Al³⁺ and Ga³⁺, with emission maxima at 466 nm and 477 nm, respectively, and detection limits as low as 48 nM for Al³⁺ and 33 nM for Ga³⁺. The probe showed high selectivity for these ions over a wide range of competing cations and anions, forming stable 1:1 complexes with log β′ values of 5.98 for Al³⁺ and 6.28 for Ga³⁺. DFT calculations revealed a tridentate coordination mode via the phenolic oxygen, azomethine nitrogen, and carbonyl oxygen, with distinct electronic transitions for each complex, including a ligand-to-metal charge transfer character in the Ga³⁺ complex. The probe demonstrates reversibility and excellent solution stability, offering a simple and sensitive platform for the environmental and biological monitoring of aluminum(III) and gallium(III) ions. Full article

In this study, the indium (In) composition in amorphous indium gallium zinc oxide (a-IGZO) thin films was systematically varied from 33% to 84% using a sol–gel process. Subsequently, aluminum/IGZO/aluminum (Al/IGZO/Al) metal–semiconductor–metal (MSM) UV photodetectors were fabricated to investigate the influence of composition on the structural, optical, and photoelectric properties. The results indicate that all films maintain an amorphous structure despite the increasing In content, while the ratio of oxygen vacancies, O_vac/(M-O + O_vac), rises from 36% to 52%. Concurrently, the optical bandgap decreases from 2.92 eV to 2.32 eV. Under a bias of 20 V, the dark current increases from 2.11 × 10⁻⁹ A to 1.90 × 10⁻⁵ A as the In content rises. When illuminated by a 360 nm LED with a power density of 8.6 mW/cm², the device with 60% In exhibits a photocurrent-to-dark-current ratio of approximately 10⁴, a responsivity of 19.45 A/W, and a specific detectivity of 8.19 × 10¹² Jones. The response time and recovery time of this device are 39.8 s and 577.4 s, respectively. These findings reveal a competitive relationship between enhanced optical absorption and defect generation induced by In composition, providing valuable guidance for the performance optimization of a-IGZO UV photodetectors through compositional engineering. Full article

The biological effects of dietary fiber (DF) are often associated with its chemical structure and interactions with the immune system. In this study, soluble DF (SDF) from quinoa bran was modified via gallium ion (Ga³⁺) chelation to form SDF-Ga. Results showed that gallium chelation reduced molecular weight, homogenized the polymer, and increased chain branching, forming a compact three-dimensional network. The cytotoxicity of HCT-116 colorectal cancer cells mediated by NK cells was significantly influenced by SDF-Ga, reaching 45.32% at 100 μg/mL. Key immune factors exhibited notable upregulation. Co-culture assays indicated that SDF-Ga inhibited cancer cell proliferation and migration (p < 0.01). In vitro assays suggested a concentration-dependent inhibition of HCT-116 cell viability, exhibiting enhanced anticancer potential compared with unmodified SDF. In summary, our results highlight that gallium chelation is an effective strategy to improve the functional properties of dietary fibers. The dual immunomodulatory and anticancer activities of the SDF-Ga complex position it as a valuable candidate for the development of novel nutraceuticals and health-promoting food products. Full article

In this work, a novel understanding of the main failure mechanism of a Schottky p-GaN gate AlGaN/GaN HEMT subject to forward gate stress is reported. First an experimental characterization of the gate leakage current (I_GSS) at different temperatures is reported. Then, Technology Computer Aided Design (TCAD) simulations are used to reproduce the experimental I_GSS thanks to the impact ionization model, also at different temperatures. Simulation results underline how the stressed regions for the Device Under Test (DUT) at high gate biases are the Schottky/p-GaN interface, the p-GaN/AlGaN barrier interface, and p-GaN sidewalls. Moreover, Time Dependent Gate Breakdown (TDGB) measurements were done, and the TEM analysis on the failed device showed the lattice crystal damage located at the p-GaN/AlGaN interface, in accordance with TCAD simulations’ current density distribution at high voltage gate stress. Full article

Gallium-based liquid metals have garnered significant attention due to their distinct combination of metallic and liquid behavior at room temperature. This review systematically examines the fundamental properties and advanced multifunctional applications of this class of materials. Key characteristics such as low melting point, excellent fluidity, high electrical and thermal conductivity, and biocompatibility are first highlighted. Subsequently, progress in four major application areas is discussed. In sensing, these materials enable the fabrication of highly compliant and responsive devices capable of monitoring strain, temperature, and electromagnetic fields. Within biomedical engineering, their inherent low toxicity and biocompatibility underpin advances in biosensing platforms, precision drug delivery, and engineered tissue scaffolds. For energy-related applications, they are utilized in batteries and high-efficiency thermoelectric systems for converting heat into electricity. In catalysis, their dynamic and tunable interfaces facilitate efficient carbon dioxide conversion and selective thermocatalytic reactions. This review summarizes current advances in the application of gallium-based liquid metals and provides critical perspectives on future developments and opportunities in this technology. Full article

With the advent of 6G mobile communication, the demand for ultra-high bandwidth wireless communication has increased rapidly, drawing significant attention to visible light communication (VLC) as a promising emerging technology. GaN-based laser diodes (LDs) are regarded as high-speed light sources for VLC owing to their high modulation bandwidth and high optical power density. Apart from the active region design, the LD’s structure also plays a crucial role in determining their dynamic properties, which have yet to be thoroughly studied in III-nitride LDs. In this work, we systematically investigate InGaN/GaN laser diodes with three ridge waveguide configurations: a conventional single-ridge structure, a dual-ridge large-mesa structure, and a dual-ridge small-mesa structure. The threshold current, small-signal modulation bandwidth of devices with different structures are comparatively analyzed. Experimental results reveal that the double-ridge small mesa laser diode achieves a modulation bandwidth of −3 dB at 6.02 GHz. These results provide valuable insights into the structural optimization of GaN-based high-speed laser diodes and offer practical guidance for the development of high-performance, energy-efficient VLC transmitters. Full article

Wide-bandgap (WBG) semiconductors are propelling a paradigm shift in advanced power electronics, offering functionality that includes higher-switching-frequency operation with improved efficiency and power density possibilities. Gallium nitride (GaN) exhibits unique material properties that correspond to device parameters beneficial for achieving an improved performance compared to its counterparts. The inception of GaN power semiconductor devices has enabled advanced power electronics to realize efficient and compact power converters. However, the current rating of the devices is constrained, and paralleling of the devices is vital to realize high-currentrated power modules. Furthermore, paralleling of the devices can provide improved cooling results in high-power-density systems. This paper presents a comprehensive review study of the paralleling of GaN devices to discuss the different challenges associated with paralleling. One of the fundamental challenges is associated with the design of a structure for paralleling GaN devices. The parallel device structure consequently impacts the parasitics of the device, which limit the operating switching frequency and thermo-mechanical aspects. Furthermore, power loop inductance, gate loop inductance asymmetry, common-source inductance, gate inductance trace length mismatch, and different challenges lead to design trade-offs and efforts to optimize the design by realizing an appropriate trade-off, considering low-inductance packaging along with thermal strategies, and considering a parallel circuit layout and structure. Considering the recent research trends and studies related to the design of parallel GaN devices, this paper presents future perspectives anticipating the realization of an improved parallel GaN device structure. Full article

Background/Objectives: Fibroblast activation protein (FAP) has emerged as a promising target for oncologic molecular imaging due to its high expression in cancer-associated fibroblasts and low presence in healthy tissues. Among available FAP ligands, [⁶⁸Ga]Ga-FAPi-46 has shown rapid tumor accumulation, low background uptake, and broad tumor applicability. This study reports the successful translation of [⁶⁸Ga]Ga-FAPi-46 from preclinical development to routine clinical radiopharmacy practice, detailing automated synthesis, quality control performance, radiochemical stability, and the first clinical imaging results. Methods: Automated radiolabeling of FAPi-46 with gallium-68 was performed using a synthesis module. Quality control included radiochemical purity assessments by iTLC, SPE, and RP-HPLC (pH, appearance, endotoxin levels, and membrane integrity testing). Radiochemical stability was evaluated in saline (up to 6 h) and human serum (up to 90 min). In vitro characterization included the partition coefficient and serum protein binding determination. A clinical evaluation was conducted in a woman with newly diagnosed lung adenocarcinoma who underwent both [¹⁸F]FDG PET/CT and [⁶⁸Ga]Ga-FAPi-46 PET/CT. Results: Automated synthesis of [⁶⁸Ga]Ga-FAPi-46 achieved a high radiochemical yield (87.9 ± 1.3%) and radiochemical purity greater than 98%. All batches met release specifications for sterility, apyrogenicity, and physicochemical parameters. The radiotracer demonstrated high stability in saline and human serum, with radiochemical purity consistently above 95% at all evaluated time points. The compound showed a hydrophilic profile (LogP = −3.32 ± 0.14) and 40–60% serum protein binding. Clinically, [⁶⁸Ga]Ga-FAPi-46 PET/CT provided superior lesion delineation compared to [¹⁸F]FDG, revealing additional mediastinal, supraclavicular, and brain metastases. Conclusions: [⁶⁸Ga]Ga-FAPi-46 can be reliably synthesized using automated procedures under routine radiopharmacy conditions, meeting regulatory quality standards and demonstrating excellent stability. Its enhanced lesion detectability compared with [¹⁸F]FDG in the first patient case supports its potential value for oncological staging and clinical implementation. Full article

High quality factor (Q factor) resonant metasurfaces enable efficient mid-infrared (MIR) upconversion, yet their narrow operating bandwidths severely limit practical broadband detection and imaging applications. Although high Q magnetic toroidal dipole (MTD) modes exhibit outstanding momentum space ($k$-space) stability in linear optics, their application in nonlinear processes has primarily been confined to degenerate second-harmonic generation (SHG), leaving complex non-degenerate processes such as sum-frequency generation (SFG) largely unexplored. Here, we propose a tunable MIR upconversion platform based on an all-dielectric gallium phosphide (GaP) dimer metasurface. Breaking the in-plane symmetry to trigger Brillouin zone folding excites robust MTD quasi-guided modes (MTD-QGM), tightly confining the locally enhanced optical fields within the highly nonlinear GaP nanostructure. Synchronizing this high Q resonance with a spatially overlapping pump mode yields an exceptional SFG conversion efficiency of $7.9\times {10}^{-4}$, successfully translating a 3101.8 nm MIR signal to the 903 nm near-infrared band. Crucially, the intrinsic $k$-space stability of the MTD-QGM enables continuous, broadband upconversion through simple angle tuning. This mechanism effectively overcomes the narrow-band limitations characteristic of typical symmetry-protected resonators, establishing a robust paradigm for room-temperature MIR detection. Full article

Gallium (Ga) in coal is a nationally emerging strategic mineral resource, yet research on using petrophysical methods to detect the spatial variation in critical metals in coal seams remains limited. Analyzing the distribution characteristics of Ga-rich coal using geophysical well-logging methods is of great significance for the development and utilization of Ga. This study introduces a quantitative method for predicting Ga-rich laminations in ultra-thick bituminous coal seams by integrating: (i) wireline-log-based lithofacies classification, (ii) lithofacies-constrained mineral inversion, and (iii) lithofacies-constrained and laboratory-established Ga–mineral correlations. The coal seam was first classified into four distinct lithofacies types—(i) parting, (ii) medium-ash coal (MA), (iii) low-ash coal (LA), and (iv) extra-low-ash coal (ELA)—through integration of conventional wireline log interpretation, cluster analysis, and XGBoost machine learning. Second, lithofacies-constrained Ga–host mineral associations were established by integrating core sample analysis, correlation analysis, and linear regression modeling. Third, mineral content predictions for each lithofacies were obtained through wireline-log-based mineral inversion, constrained by petrophysical boundaries. Finally, prediction uncertainties were evaluated using Markov Chain Monte Carlo (MCMC) simulation, while Ga-rich laminations were predicted by integrating log-derived mineral inversion results with regressed Ga prediction models. The results demonstrate strong agreement between mineral inversion and XRD analyses within uncertainty ranges, achieving a prediction accuracy of 73.6% for Ga. This validated methodology presents a novel approach for quantifying Ga concentrations in coal, as demonstrated through a case study. Full article

The accelerating adoption of electric vehicles (EVs) is driving the demand for next-generation wide-bandgap (WBG) power devices that can deliver high efficiency, high power density, and robust operation under stringent electrical and thermal stress. Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have emerged as a leading WBG technology due to their high breakdown voltage, ultrafast switching capability, and low conduction and switching losses relative to silicon devices, enabling high-performance EV power converters such as on-board chargers, DC-DC converters, and traction inverters. This review provides a comprehensive device-level assessment of GaN HEMTs, emphasizing advanced device architectures, state-of-the-art discrete transistors, and their implications for high-frequency, high-efficiency power conversion. Critical performance and reliability challenges, including current collapse, self-heating, and gate degradation, are analyzed in the context of their physical mechanisms and operational behavior under realistic conditions such as elevated junction temperatures, high switching frequencies, and dynamic load profiles. Furthermore, emerging opportunities in ultra-wide-bandgap semiconductor technologies beyond GaN are discussed, providing insights to guide the design, optimization, and robust integration of WBG devices into next-generation EV power electronic systems. Full article

Copper (Cu) smelting slags are considered secondary reserves of technology metals (TMs) and base metals (BMs), which are crucial for the transition to renewable energy and mechatronic applications. In this study, thermochemical and experimental analyses were conducted to investigate the pyrometallurgical extraction of TMs and BMs from Cu smelting slag. FactSage thermochemical simulations and smelting experiments were carried out at temperatures from 1300 to 1600 °C and with carbon (reductant) additions of 2% to 10% relative to the mass of the feed slag. The results showed that during smelting, gallium (Ga), germanium (Ge), cobalt (Co), and copper (Cu) deported into the iron-based alloy product. Zinc (Zn) and lead (Pb) oxidised to ZnO and PbO, respectively, which were subsequently collected as fumes. The produced alloy mass was more sensitive to carbon addition than to smelting temperature variation. The TM and BM contents in the alloy decreased with increasing carbon addition in the feed; this was attributed to dilution by Fe, Si, and C from the increasing reduction of iron and silicon oxides in the feed slag and dissolution of C in the alloy. High recovery degrees of TMs and BMs in the alloy stream—over 90% for Co and Cu, over 50% for Ga, and over 70% for Ge—were achieved when smelting at 1500 °C with 4% carbon addition. The final alloy comprised 70.5% Fe, 6.6% Co, 23.6% Cu, 0.11% Ga, and 0.13% Ge. The fumes primarily comprised ZnO and, to a lesser extent, PbO, with recovery degrees over 90% for Zn and Pb. These alloy and fume products would be processed following conventional hydrometallurgical separation and purification processes to produce high-purity metals. The pyrometallurgical extraction of TMs and BMs presents an opportunity for the valorisation of Cu smelting slag dumps, especially in Southern Africa, aiming to attain zero-waste industrial processes. Full article

Power density and power efficiency are crucial for the design of high-performance computing servers. Buck converters exist due to their simplicity, but achieving a solution that combines high efficiency and high power density remains an ongoing research area in buck converter design. High-frequency switching, which reduces inductor size in buck converters, is a common method for achieving high power density; however, high-frequency switching introduces higher switching losses, hence the frequent use of GaN HEMTs, which have low switching losses. To achieve both high efficiency and high power density, this study proposes a compact buck converter design that pairs a D-type GaN HEMT with a low-voltage PMOS, termed a P-cascode GaN HEMT. We analyze different current switching modes and find that boundary conduction mode (BCM) can minimize inductor size while maintaining high power efficiency. This paper explores the theoretical basis of BCM and the P-cascode GaN HEMT, derives the operating conditions of BCM, estimates power efficiency, and proposes a high-power density buck converter solution. Simulation and experimental results show that the proposed design achieves 95% power efficiency in applications from 12 V to 3.3 V, while reducing the inductor size by a factor of 10 compared to continuous conduction mode (CCM) designs. Full article

This study proposes a 300 W class Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA)-based microwave plasma generator system for implementing next-generation light sources with high brightness and color rendering at 2.45 GHz. To overcome the lifetime limitations and control constraints of conventional magnetron systems, the proposed system introduces custom packaging technology utilizing GaN-on-SiC Bare-dies fabricated via the Win-semiconductor’s NP25 process. This approach minimizes parasitic components and significantly reduces thermal resistance compared to standard packages, ensuring reliability during high-power operation. A stable RF output of 300 W was achieved through two-stage power combining. For the plasma source, an Ar-InBr-Hg gas mixture was employed to optimize optical characteristics. This gas mixture is commonly used in electrodeless plasma lamps due to its high luminous efficacy and stable discharge characteristics. To analyze the rapid impedance discontinuity during gas ignition, numerical analysis based on the Drude model was performed, theoretically identifying the complex permittivity transition of the medium and the resulting resonant frequency up-shift mechanism. To mitigate system instability during this transition, an adaptive frequency tracking and feedback control loop based on real-time VSWR monitoring was implemented. Experimental results demonstrate precise tracking within a 100 MHz frequency variable range, achieving a system efficiency of over 53% and maintaining a VSWR below 1.15:1. These results validate the practical feasibility of GaN SSPA technology in electrodeless lighting and industrial plasma applications utilizing high-power RF energy. Full article

As a ternary metal oxide, indium gallium zinc oxide (IGZO) has gathered much attention for various applications, including gas sensors, due to its remarkable semiconducting properties, even in amorphous phases and at a low process temperature. For gas sensing applications, as surface area is an important factor affecting the response and performance of a gas sensor, nanofibers (NFs) with 1D morphology are expected to have good sensing performance. In this research, IGZO NFs were synthesized using an electrospinning process, which is a suitable technique for the large-scale and low-cost fabrication of NFs. Various characterizations were performed on the synthesized IGZO NFs, and the desired NF morphology and chemical composition were confirmed. Gas sensing experiments showed that the sensor was sensitive and selective to H₂S gas at 250 °C with a response of 40.5 to 100 ppm gas. This study demonstrates the strong potential of IGZO for use in sensitive and selective H₂S gas sensors. Full article