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Preparation of 6N,7N High-Purity Gallium by Crystallization: Process Optimization

Department of Chemistry and Chemical Engineering, Lvliang University, Lvliang 033001, China
School of Metallurgy, Northeastern University, Shenyang 110819, China
Author to whom correspondence should be addressed.
Materials 2019, 12(16), 2549;
Received: 16 July 2019 / Revised: 2 August 2019 / Accepted: 8 August 2019 / Published: 10 August 2019
(This article belongs to the Section Manufacturing Processes and Systems)
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In this study, radial crystallization purification method under induction was proposed for preparing 6N,7N ultra-high purity gallium crystal seed. The effect of cooling temperature on the morphology of the crystal seed, as well as the cooling water temperature, flow rate, and the addition amount of crystal seed on the crystallization process was explored, and the best purification process parameters were obtained as follows: temperature of the crystal seed preparation, 278 K; temperature and flow rate of the cooling water, 293 K and 40 L·h−1, respectively; and number of added crystal seed, six. The effects of temperature and flow rate of the cooling water on the crystallization rate were investigated. The crystallization rate decreased linearly with increasing cooling water temperature, but increased exponentially with increasing cooling water flow. The governing equation of the crystallization rate was experimentally determined, and three purification schemes were proposed. When 4N crude gallium was purified by Scheme I, 6N high-purity gallium was obtained, and 7N high-purity gallium was obtained by Schemes II and III. The purity of high-purity gallium prepared by the three Schemes I, II, and III was 99.999987%, 99.9999958%, and 99.9999958%, respectively. View Full-Text
Keywords: gallium; high-purity; crystallization; process optimization gallium; high-purity; crystallization; process optimization

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Hou, J.; Pan, K.; Tan, X. Preparation of 6N,7N High-Purity Gallium by Crystallization: Process Optimization. Materials 2019, 12, 2549.

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