This paper presents scaling of Floating-Gate (FG) devices, and the resulting implication to large-scale Field Programmable Analog Arrays (FPAA) systems. The properties of FG circuits and systems in one technology (e.g., 350 nm CMOS) are experimentall...
To lower the charge leakage of a floating gate device and improve the operation performance of memory devices toward a smaller structure size and a higher component capability, two new types of floating gates composed of pn-type polysilicon or np-typ...
In floating gate compute-in-memory (CIM) chips, due to the gate equivalent capacitance of the large-scale array and the parasitic capacitance of the long-distance transmission wire, it is difficult to balance the switching speed and area of the word...
A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complem...
Although the von Neumann architecture-based computing system has been used for a long time, its limitations in data processing, energy consumption, etc. have led to research on various devices and circuit systems suitable for logic-in-memory (LiM) co...
Mobile phones, laptops, computers, digital watches, and digital calculators are some of the most used products in our daily life. In the background, to make these gadgets work as per our desire, there are many simple components necessary for electron...
In this paper, a floating-gate flexible nonvolatile memory is reported that is composed of natural biological materials, namely, silkworm hemolymph, graphene quantum dots as the floating-gate layer, and polymethyl methacrylate (PMMA) as the insulatin...
As a critical storage technology, the material selection and structural design of flash memory devices are pivotal to their storage density and operational characteristics. Although van der Waals materials can potentially take over the scaling roadma...
Nanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window. In this study, we propose and evaluate a mesh-ty...
Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Eff...
In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a “punch-and-plug” process—with gate-all-a...
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes,...
NO2 is a toxic gas mainly generated by combustion processes, such as vehicle emissions and industrial activities. It is a key contributor to smog, acid rain, ground-level ozone, and particulate matter, all of which pose serious risks to human health...
Memory devices based on floating-gate transistor have recently become dominant technology for non-volatile storage devices like USB flash drives, memory cards, solid-state disks, etc. In contrast to many communication channels, the errors observed in...
This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent...
Advancements in carbon nanotube-based FET (CNT-FET) biosensors from 2016 to 2025 have boosted their sensitivity, specificity, and rapid detection performance for biomedical purposes. This review highlights key innovations in transducer materials, fun...
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in...
AlGaN/GaN HEMT hydrogen gas sensors were optimized by AlGaN barrier thickness in the gate-source connected configuration demonstrated high response and robust stability up to 500 °C. First, we found that the hydrogen sensing performance of a conventi...
Neuromorphic computing has emerged as one of the most promising paradigms to overcome the limitations of von Neumann architecture of conventional digital processors. The aim of neuromorphic computing is to faithfully reproduce the computing processes...
Accurate monitoring of sodium and potassium ions in biological fluids is crucial for diseases related to electrolyte imbalance. Low-dimensional materials such as carbon nanotubes can be used to construct biochemical sensors based on high-performance...
In this work, floating-gate organic field-effect transistor memory using the n-type semiconductor poly-{[N,N′-bis(2-octyldodecyl) naphthalene-1,4,5,8-bis (dicarbo- ximide)-2,6-dili]-alt-5,5′-(2,2′-bithiophene)} (N2200) as a charge-t...
The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET...
The stress-induced leakage current (SILC) degradation of partially depleted silicon in insulator (PDSOI) devices under constant voltage stress (CVS) was studied. Firstly, the behaviors of threshold voltage degradation and SILC degradation of H-gate P...
We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO2 high-k dielectric extend above source and dr...
We investigated the radio frequency (RF) performance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on silicon carbide substrates, featuring two distinct T-shaped gate structures. A comparative analysis between a silicon nitride (...
The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are...
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This paper describes the performance prospect of scaled cross-current tetrode (XCT) CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvemen...
Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we re...
A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performan...
This article presents a gate driver circuit with all-magnetic isolation for driving silicon carbide (SiC) power devices in a three-level T-type bridge-leg. Gate driver circuitry for SiC devices has to be tolerant of rapid common-mode voltage changes....
With the continuous scaling down of devices, traditional one-transistor one-capacitor dynamic random access memory (1T-1C DRAM) has encountered great challenges originated from the large-volume capacitor and high leakage current. A semi-floating gate...
In this paper, a split-gate resurf stepped oxide with double floating electrodes (DFSGRSO) U-shape metal oxide semiconductor field-effect transistor (UMOSFET) is proposed. The floating electrodes are symmetrically distributed on both sides of the sou...
This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages. The p-IGBT, fabricated on an n-type substrate, offe...
A split-gate metal–oxide–semiconductor field-effect transistor (SG-DMOSFET) is a well-known structure used for reducing the gate–drain capacitance (CGD) to improve switching characteristics. However, SG-DMOSFETs have problems such as the degradation...
Charge carrier traps due to crystal defects in GaN on Si HEMT devices are responsible for dynamic performance degradation, long-term reliability limitations, and peculiar failure modes. The behavior of traps depends on many variables including hetero...
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation in...
This work investigates the impact of load-dump stress on p-GaN HEMTs under floating gate condition. The experiments show that preconditioning the device with a small load-dump stress (150 V, @td = 100 ms and tr = 8 ms) enhances its robustness against...
The existing von Neumann architecture for artificial intelligence (AI) computations suffers from excessive power consumption and memory bottlenecks. As an alternative, compute-in-memory (CIM) technology has been emerging. Among various CIM device can...
As the performance of digital devices is improving, Hardware-In-the-Loop (HIL) techniques are being increasingly used. HIL systems are frequently implemented using FPGAs (Field Programmable Gate Array) as they allow faster calculations and therefore...
We report on novel UVC sensors based on the floating gate (FG) discharge principle. The device operation is similar to that of EPROM non-volatile memories UV erasure, but the sensitivity to ultraviolet light is strongly increased by using single poly...
A SiC fin-channel MOSFET structure (Fin-MOS) is proposed for an enhanced gate shielding effect. The gates are placed on each side of the narrow fin-channel region, while grounded p-shield regions below the gates provide a strong shielding effect. The...
Interconnecting nanodevices with the aim of assembling quantum computing architectures is one of the current outstanding challenges. At the nanoscale, the quantum interconnects become comparable in complexity with the active devices and should be tre...
In this study, we developed a V-NAND with an improved IGZO-P type (IP) floating filler (FF) structure based on an IGZO channel verified in previous studies and demonstrated that it has a very fast erase speed through device simulation. The proposed F...
This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gat...
In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATL...
A novel edge-termination structure for a SiC trench metal–oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well...
In order to achieve better accuracy, modern models have become increasingly large, leading to an exponential increase in computational load, making it challenging to apply them to edge computing. Binary neural networks (BNNs) are models that quantize...
Over the past decade, the dimensional scaling of semiconductor electronic devices has been facing fundamental and physical challenges, and there is currently an urgent need to increase the ability of dynamic random-access memory (DRAM). A semi-floati...
Satellite and edge computing designers develop algorithms that restrict resource utilization and execution time. Among these design efforts, optimizing Fast Fourier Transform (FFT), key to many tasks, has led mainly to in-place FFT-specific hardware...
This work showcases the physical insights of a core-shell dual-gate (CSDG) nanowire transistor as an artificial synaptic device with short/long-term potentiation and long-term depression (LTD) operation. Short-term potentiation (STP) is a temporary p...
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