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Appl. Sci. 2016, 6(1), 7;

Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

State Key Laboratory of Application-Specific Integrated Circuits and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA
Author to whom correspondence should be addressed.
Academic Editor: Hung-Yu Wang
Received: 1 December 2015 / Revised: 18 December 2015 / Accepted: 21 December 2015 / Published: 26 December 2015
Full-Text   |   PDF [6925 KB, uploaded 28 December 2015]   |  


This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent basis for low-power, high-density and high-reliability non-volatile memory applications. Recently, solid-state non-volatile memory devices based on redox-active molecules have been reported, exhibiting fast speed, low operation voltage, excellent endurance and multi-bit storage, outperforming the conventional floating-gate flash memory. Such high performance molecular memory will lead to promising on-chip memory and future portable/wearable electronics applications. View Full-Text
Keywords: molecular electronics; redox-active molecules; non-volatile memory; high density; high endurance molecular electronics; redox-active molecules; non-volatile memory; high density; high endurance

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Zhu, H.; Li, Q. Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules. Appl. Sci. 2016, 6, 7.

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