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Open AccessFeature PaperReview

Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

by Hao Zhu 1,2 and Qiliang Li 2,*
1
State Key Laboratory of Application-Specific Integrated Circuits and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Hung-Yu Wang
Appl. Sci. 2016, 6(1), 7; https://doi.org/10.3390/app6010007
Received: 1 December 2015 / Revised: 18 December 2015 / Accepted: 21 December 2015 / Published: 26 December 2015
This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent basis for low-power, high-density and high-reliability non-volatile memory applications. Recently, solid-state non-volatile memory devices based on redox-active molecules have been reported, exhibiting fast speed, low operation voltage, excellent endurance and multi-bit storage, outperforming the conventional floating-gate flash memory. Such high performance molecular memory will lead to promising on-chip memory and future portable/wearable electronics applications. View Full-Text
Keywords: molecular electronics; redox-active molecules; non-volatile memory; high density; high endurance molecular electronics; redox-active molecules; non-volatile memory; high density; high endurance
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MDPI and ACS Style

Zhu, H.; Li, Q. Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules. Appl. Sci. 2016, 6, 7.

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