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Open AccessArticle

A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control

School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
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Micromachines 2019, 10(11), 722; https://doi.org/10.3390/mi10110722
Received: 16 September 2019 / Revised: 23 October 2019 / Accepted: 24 October 2019 / Published: 25 October 2019
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complementary metal–oxide–semiconductor (CMOS) process. A model of the device was developed to demonstrate the working principle. Theoretical analysis and simulation results proved the superposition of the two control gates. A series of test experiments were carried out and the results showed that the device was in accordance with the basic electrical characteristics of a floating gate transistor, including the current–voltage (I–V) characteristics and the threshold characteristics observed on the two control gates. Based on the source follower circuit, the experimental results proved that the device can reduce interference by more than 29 dB, which demonstrates the feasibility of the proposed device for active noise control. View Full-Text
Keywords: floating gate transistor; control gate; CMOS device; active noise control floating gate transistor; control gate; CMOS device; active noise control
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MDPI and ACS Style

Mao, C.; Yang, C.; Ma, H.; Yan, F.; Zhang, L. A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control. Micromachines 2019, 10, 722.

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