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Open AccessArticle

Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage

Department of Electrical Engineering, Pusan National University, Pusan 46241, Korea
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Appl. Sci. 2020, 10(3), 753; https://doi.org/10.3390/app10030753
Received: 15 December 2019 / Revised: 16 January 2020 / Accepted: 17 January 2020 / Published: 21 January 2020
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
A novel edge-termination structure for a SiC trench metal–oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well (BPW) implantation region. The trench can be filled with oxide or gate materials. Indeed, it has almost the same cross-sectional structure as the active region of a SiC trench MOSFET. Therefore, there is little or no additional process loads. A conventional floating field ring (FFR) structure utilizes the spreading of the electric field in the periodically depleted surface region formed between a heavily doped equipotential region. On the other hand, in the trenched ring structure, an additional quasi-equipotential region is provided by the BPW region, which enables deeper and wider field-spreading profiles, and less field crowding at the edge region. The two-dimensional Technology Computer Aided Design (2D-TCAD) simulation results show that the proposed trenched ring-edge termination structures have an improved breakdown voltage compared to the conventional floating field ring structure. View Full-Text
Keywords: breakdown voltage; edge termination; conventional floating field ring; SiC trench structure; bottom protection well breakdown voltage; edge termination; conventional floating field ring; SiC trench structure; bottom protection well
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MDPI and ACS Style

Jeong, J.-H.; Cha, J.-H.; Kim, G.-H.; Cho, S.-H.; Lee, H.-J. Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage. Appl. Sci. 2020, 10, 753.

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