Weyl semimetals can be described as the three-dimensional analogue of graphene, showing linear dispersion around nodes (Weyl points). Tantalum arsenide is among the most studied Weyl semimetals. It has been demonstrated that TaAs has a very high valu...
Dental caries is a progressive disease with varying phases of demineralization and remineralization, and the scope of reversing the carious lesion is increased if it is diagnosed before there is surface cavitation. Preventive management strategies ar...
In this study, an axisymmetric Czochralski furnace model for the LEC growth of gallium arsenide is presented. We produced 88 datasets through computational fluid dynamics simulations. Among the many parameters that affect crystal growth, a total of 1...
As widely-available silicon solar cells, the development of GaAs-based solar cells has been ongoing for many years. Although cells on the gallium arsenide basis today achieve the highest efficiency of all, they are not very widespread. They have part...
Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs...
In this work, we report the fabrication of germanium arsenide () field-effect transistors with ultrathin channel and their electrical characterizations in a wide temperature range, from to . We show that at lower temperatures, the electrical conducti...
This paper concerns the development of a machine learning tool to detect anomalies in the molecular structure of Gallium Arsenide. We employ a combination of a CNN and a PCA reconstruction to create the model, using real images taken with an electron...
We carried out a density functional theory (DFT) study of the electronic and related properties of zinc blende indium arsenide (zb-InAs). These related properties include the total and partial densities of states and electron and hole effective masse...
This paper focuses on the triple-junction gallium arsenide solar array of a MEO (Medium Earth Orbit) satellite that has been in orbit for 7 years. Through a combination of theoretical and data-driven methods, it conducts research on anti-radiation de...
Point defects are inevitable, at least due to thermodynamics, and essential for engineering semiconductors. Herein, we investigate the formation and electronic structures of fifteen different kinds of intrinsic point defects of zinc blende indium ars...
We designed a broadband absorber based on a multilayer grating structure composed of gallium arsenide and titanium. The basic unit is a grating structure stacked on top of a semiconductor of gallium arsenide and titanium metal. We used the finite dif...
The recovery of gallium (Ga) from gallium arsenide (GaAs) scrap using a leaching-ion exchange method was investigated. The ground GaAs scrap was leached, using 2.0 N nitric acid at 30 °C for 1.0 h, and the dissolution of Ga and arsenic (As) reach...
The Aghbar-Bou Azzer East mining district (ABED) is located between the Bou Azzer East and Aghbar deposits. It is an area of approximately 7 km long towards ENE–WSW and 2 km wide towards N–S. In this barren area, volcano-sedimentary rocks...
Crystal orientation significantly influences deformation during nanopolishing due to crystal anisotropy. In this work, molecular dynamics (MD) simulations were employed to examine the process of surface generation and subsurface damage. We conducted...
This study describes the distribution of arsenic mobile species in the tailings of Cu–Co–Ni–arsenide using the sequential extraction and determining the contents of arsenate (AsV) and arsenite (AsIII). The object of this study is the tailings ponds o...
A global design method for a terahertz monolithic integrated frequency multiplier is proposed. Compared with a traditional independent design, the method in this paper adopts overall optimization and combines the device with the circuit design. The a...
Despite the remarkable developments in advanced materials, silicon and gallium arsenide remain among the leading semiconductors of our time. Nanomechanical studies of these semiconductor crystals, including nanoindentation-induced structural phase tr...
Dental caries is an oral disease that has a global footprint. The first onslaught is subsurface, and at this stage, it can be remineralized. This study attempts to analyze the compositional changes that occur during demineralization and different sur...
Vermicomposting is one of the most important waste management techniques in the process of vermiculture. In this study, a neural network-assisted novel paradigm is proposed to predict waste from vermicomposting. The proposed neural network skeleton i...
This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, whic...
Renewable energy demand is increasing as fossil fuels are limited and pollute the environment. The solar absorber is an efficient renewable energy source that converts solar radiation into heat energy. We have proposed a gallium arsenide-backed solar...
The epitaxial deposition of a precise number, or even fractions, of monolayers of indium (In)-rich semiconductors onto gallium arsenide (GaAs) substrates enables the creation of quantum dots based on InAs, InGaAs and indium phosphide (InP) for infrar...
In this paper, the output electrical pulse width of semi-insulating gallium arsenide photoconductive semiconductor switch (SI-GaAs PCSS) is controlled by means of Blumlein pulse formation line. Under the condition that the bias voltage is 28 kV and t...
In this work, we report the results of the compositional analysis of an aluminum gallium arsenide (AlGaAs) sample using the calibration-free laser-induced breakdown spectroscopy (CF-LIBS) technique. The AlGaAs sample was doped with three various conc...
The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxi...
Controlling the twist angle between double stacked van der Waals (vdW) crystals holds great promise for nanoscale light compression and manipulation in the mid-infrared (MIR) range. A lithography-free geometry has been proposed to mediate the couplin...
Electrochemical deposition of silicon at room temperature is problematic due to the intrinsically low conductivity of the deposits. This study reports the photoelectrochemical (PEC) deposition of silicon (Si) and silicon–carbon (Si–C) lay...
The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major...
Proton irradiation experiments have been used as a surrogate for studying radiation effects in numerous materials for decades. The abundance and accessibility of proton accelerators make this approach convenient for conducting accelerated radiation a...
Employing sunlight to produce electrical energy has been demonstrated to be one of the most promising solutions to the world’s energy crisis. The device to convert solar energy to electrical energy, a solar cell, must be reliable and cost-effec...
To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mob...
This paper reports on the use of gallium arsenide-based integrated passive device technology for the implementation of a miniaturized bandpass filter that incorporates an intertwined circle-shaped spiral inductor and an integrated center-located capa...
Semiconductor metal oxide films on the surface of gallium arsenide are obtained by chemostimulated oxidation under the influence of a Sb2O3 + Y2O3 composition. The chemical composition of the obtained films and the surface morphology are determined b...
This work proposes a microwave resonator built from gallium arsenide using integrated passive device (IPD) technology. It consists of a three-layered interlaced spiral structure with airbridges and inner interdigital structures. For integrated system...
In this paper, a real-time, dynamic three-dimensional (3D) shape reconstruction scheme based on the Fourier-transform profilometry (FTP) method is achieved with a short-wave infrared (SWIR) indium gallium arsenide (InGaAs) camera for monitoring appli...
This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by inte...
Gallium arsenide is used in semiconductor industries worldwide. Numerous waste etching solutions are produced during the processes of GaAs wafer production. Therefore, a complete and eco-friendly technology should be established to recover gallium as...
This paper presents two cryogenic low-noise amplifiers (LNAs) based on the WIN’s 0.18 μm gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process designed for radio telescope receivers. Discrete tra...
The new ternary arsenides AE3TrAs3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr3GaP3 and Ba3AlP3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr3AlA...
In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an...
A new infrared thermometer, sensitive to wavelengths between 3 μm and 3.5 μm, has been developed. It is based on an Indium Arsenide Antimony (InAsSb) photodiode, a transimpedance amplifier, and a sapphire fiber optic cable. The thermometer used...
Unusual Ag-(Ni-Co-Sb-As-Hg ± Bi)-bearing fault-fill vein ore shoot mineralization set in a gangue of quartz, fluorite, and barite has been identified in Morocco’s Aouli deposit. The Paleozoic host rocks consist of a succession of Cambria...
A broadband differential-MMIC low-noise amplifier (DLNA) using metamorphic high-electron-mobility transistors of 70 nm in Gallium Arsenide (70 nm GaAs mHEMT technology) is presented. The design and results of the performance measurements of the DLNA...
We compare three poorly known, historical Ni–Co-bearing hydrothermal deposits in different geological settings in Italy: The Ni–Co–As–Sb–Au-bearing Arburese vein system (SW Sardinia), the Co–Ni–As-rich Ussegl...
In this study, we report enhancement of terahertz (THz) radiation with indium-tin-oxide (ITO) thin-film deposited on semi-insulating gallium arsenide substrate (SI-GaAs). The amplitude of THz emission from both ITO/SI-GaAs and bare SI-GaAs substrate...
In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, whic...
The SW Sardinian basement hosts various ore deposits linked to geological processes active from Cambrian to post-Variscan times. In particular, the Southern Arburèse district hosts several granite-related W-Sn-Mo deposits and a 10 km-long system of N...
This article summarizes our understanding of the interplay between diffusion and segregation during epitaxial growth of InGaAs and InAs quantum dots. These quantum dots form spontaneously on flat GaAs (001) single-crystalline substrates by the so-cal...
In this work, we demonstrated a kind of flexibly monolithic saturable absorber (SA) with GaAs nanowires (NWs) on polyimide (PI) plastic substrate for broadband optical modulation at 1.0 and 1.5 µm, separately. The monolithic SA sample was prepa...
The Port Radium U-Cu-Ni-Co-Ag deposit in northwestern Canada is hosted within a mineral system that has generated a variety of mineralization styles from iron oxide-copper-gold to iron oxide-apatite, porphyry, skarn, and epithermal. Their genesis is...
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