Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor
Abstract
:1. Introduction
2. Experimental
2.1. Material and Sample Preparation
2.2. Proton Irradiation Experiment
2.3. Positron Annihilation Spectroscopy Characterisation
3. Results and Discussion
4. Conclusions
- Positron annihilation spectroscopy can be effectively used as a tool for the quantitative characterisation of vacancy-type defects in semiconductors exposed to harsh radiation environments. While the present experiments led to a vacancy concentration near the saturation limit of PAS, the optimal proton fluence for future irradiation experiments can be selected from the range of 1015–1016 cm−2.
- The results indicate that mild radiation environments involving high-energy protons can be effectively simulated and accelerated by employing relatively high proton fluxes. Moreover, the proton irradiation seems to induce a concentration of vacancy-type defects (mono-vacancies) that is reasonably similar to high-energy electron irradiation experiments with a similar fluence.
- While SRIM code simulations provide data about the production rates of radiation-induced defects, the presented PAS characterisation enables reliable quantification of the survival rate of the defects. Similar to numerous studies in the past and referenced in this work, the presented experiment can be expanded to include the study of the recovery of the microstructure after thermal annealing of the samples.
- There is a threshold flux above which the proton irradiation experiment becomes unreasonable and inefficient. This threshold is relatively high and lies above 1012 s−1 cm−2. At a higher proton flux, the new displacement damage cascades are initiated while the previous cascades are still occurring. This results in a sharp reduction in the concertation of the surviving vacancies.
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Parameter | Properties |
---|---|
Product No. | 82045 |
Method | GaAs LEC |
Description | Monocrystalline wafers |
Type | Semi-insulating, undoped |
Dopant | N/A |
Resistivity | 4.38 × 108 Ohm cm |
Hall Mobility | 5398 Cm2 V−1 s |
Orientation | (100) ± 0.5° |
Off Orientation | Off 2° towards (110)° |
Diameter | 50.8 ± 0.1 mm |
Thickness | 500 ± 25 μm |
Surface | SSP |
Front side | Polished |
Back side | Lapped/etched |
Sample Set No. | Irradiation Time [min]/[h] | Flux [cm−2.s−1] |
---|---|---|
Set 0 (reference) | 0/0 | 0 |
Set 1 | 16/0.27 | 1.04 × 1013 |
Set 2 | 36/0.59 | 4.63 × 1012 |
Set 3 | 222/3.70 | 7.51 × 1011 |
Set 4 | 505/8.42 | 3.30 × 1011 |
Set 5 | 1599/26.65 | 1.04 × 1011 |
GaAs Samples | p+ Flux [cm−2] | t1 [ps] | I1 [%] | t2 [ps] | I2 [%] | tAVG [ps] | FV | kV [s−1] | NV [cm−3] |
---|---|---|---|---|---|---|---|---|---|
Set 1 | 1.04 × 1013 | 223 | 98.98% | 295 | 1.02% | 223.7 | 0.97 | 9.27 × 106 | 4.64 × 1014 |
Set 2 | 4.63 × 1012 | 221 | 85.00% | 295 | 15.00% | 231.8 | 0.93 | 1.58 × 108 | 7.92 × 1015 |
Set 3 | 7.51 × 1011 | 215 | 50.00% | 295 | 50.00% | 254.0 | 1.05 | 8.97 × 108 | 4.49 × 1016 |
Set 4 | 3.30 × 1011 | 210 | 50.00% | 295 | 50.00% | 251.5 | 0.99 | 8.97 × 108 | 4.49 × 1016 |
Set 5 | 1.04 × 1011 | 203 | 46.00% | 295 | 54.00% | 251.6 | 1.07 | 1.05 × 109 | 5.27 × 1016 |
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Neuhold, I.; Noga, P.; Sojak, S.; Petriska, M.; Degmova, J.; Slugen, V.; Krsjak, V. Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor. Materials 2023, 16, 1089. https://doi.org/10.3390/ma16031089
Neuhold I, Noga P, Sojak S, Petriska M, Degmova J, Slugen V, Krsjak V. Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor. Materials. 2023; 16(3):1089. https://doi.org/10.3390/ma16031089
Chicago/Turabian StyleNeuhold, Igor, Pavol Noga, Stanislav Sojak, Martin Petriska, Jarmila Degmova, Vladimir Slugen, and Vladimir Krsjak. 2023. "Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor" Materials 16, no. 3: 1089. https://doi.org/10.3390/ma16031089