Next Article in Journal
Research on a Micro-Processing Technology for Fabricating Complex Structures in Single-Crystal Quartz
Previous Article in Journal
Applying Foil Queue Microelectrode with Tapered Structure in Micro-EDM to Eliminate the Step Effect on the 3D Microstructure’s Surface
Open AccessArticle

The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material

1
Key Lab. of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
2
Institute of Microeletronics, Chinese Academy of Sciences, Beijing 100019, China
3
School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(3), 336; https://doi.org/10.3390/mi11030336
Received: 20 February 2020 / Revised: 17 March 2020 / Accepted: 23 March 2020 / Published: 24 March 2020
(This article belongs to the Section D:Materials and Processing)
A global design method for a terahertz monolithic integrated frequency multiplier is proposed. Compared with a traditional independent design, the method in this paper adopts overall optimization and combines the device with the circuit design. The advantage is that it provides a customized design for frequency multipliers according to specifications. On the basis of the gallium arsenide process of the Institute of Microelectronics, Chinese Academy of Sciences, two types of Schottky diodes have been developed to meet the needs of different designs. On the one hand, a Schottky diode with a 3 μm junction’s diameter was used in the design of the 200 GHz balanced doubler and, on the other hand, a diode with a 5 μm diameter was used in the 215 GHz unbalanced tripler. The measured results indicated that the output power of the doubler was more than 250 μW at 180~218 GHz, and the maximum was 950 μW at 198 GHz when driven with 12.3 mW, whereas that of the tripler was above 5 mW at 210~218 GHz and the maximum exceeded 10 mW. Such frequency multiplier sources could be widely used in terahertz imaging, radiometers, and so on. View Full-Text
Keywords: Schottky diode; terahertz monolithic integrated circuit; field-circuit method Schottky diode; terahertz monolithic integrated circuit; field-circuit method
Show Figures

Figure 1

MDPI and ACS Style

Meng, J.; Qi, L.; Liu, X.; Zhou, J.; Zhang, D.; Jin, Z. The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material. Micromachines 2020, 11, 336.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop