SPAD-based solid state CMOS image sensors utilising analogue integrators have attained deep sub-electron read noise (DSERN) permitting single photon counting (SPC) imaging. A new method is proposed to determine the read noise in DSERN image sensors b...
An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dyna...
This paper reviews CMOS (complementary metal-oxide-semiconductor) MEMS (micro-electro-mechanical systems) fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of th...
We developed a multiband imaging CMOS image sensor (CIS) with a multi-storied photodiode structure, which comprises two photodiode (PD) arrays that capture two different images, visible red, green, and blue (RGB) and near infrared (NIR) images at the...
This paper presents an overview of silicon-based optical sensors for the measurement of light in the visible spectrum range. The review is focused on sensors based on CMOS (complementary metal-oxide semiconductor) technology due to the high availabil...
This paper reports a CMOS MEMS (complementary metal oxide semiconductor micro electromechanical system) piezoresistive humidity sensor fabricated by a surface micromachining process. Both pre-CMOS and post-CMOS technologies were used to fabricate the...
In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated...
Since the CMOS technology scaling has focused on improving digital circuit, the design of conventional analog circuits has become more and more difficult. To overcome this challenge, there have been a lot of efforts to replace conventional analog cir...
Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, i...
This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of...
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstr...
This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminu...
DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interf...
This paper provides the results of a comprehensive comparison between complementary metal oxide semiconductor (CMOS) amplifiers with low susceptibility to electromagnetic interference (EMI). They represent the state-of-the-art in low EMI susceptibili...
This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the p...
The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clin...
Carbon nanotubes (CNTs) can be grown locally on custom-designed CMOS microstructures to use them as a sensing material for manufacturing low-cost gas sensors, where CMOS readout circuits are directly integrated. Such a local CNT synthesis process usi...
Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer h...
This paper explores the prospect of CMOS devices to assay lead in drinking water, using calorimetry. Lead occurs together with traces of radioisotopes, e.g.,
The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in v...
Recent technology advances in CMOS image sensors (CIS) enable their utilization in the most demanding of surveillance fields, especially visual surveillance and intrusion detection in intelligent surveillance systems, aerial surveillance in war zones...
We present new developments of CMOS compatible direct conversion terahertz detector operating at room temperature. The rectenna consists of an integrated antenna, realized on the surface of the integrated circuit and connected to a nanometric metalli...
A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMO...
A complementary metal oxide semiconductor (CMOS)-compatible z-axis magnetic field sensor incorporating an additional collector is proposed to enhance magnetic sensing performance. The sensor consists of four identical magnetic sensing elements arrang...
This article introduces the current status of the 0.18-micron CMOS MEMS foundry service platform provided by the Taiwan Semiconductor Research Institute (TSRI), extensively covering the CMOS MEMS components that it has supported in development and fa...
This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensorsystems that have been developed to monitor the motion and vital signs of humans invarious envir...
The design and optimization of the analog complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are intrinsically complicated and depend heavily on the designer’s experience, and are associated with very long design and optim...
Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze imaging, food selection, semiconductor detection...
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a sing...
Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these te...
This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocoupl...
Edge computing (processing data close to its source) is one of the fastest developing areas of modern electronics and hardware information technology. This paper presents the implementation process of an analog CMOS preprocessor for use in a distribu...
This paper presents a biosensor-CMOS platform for measuring the capacitive coupling of biorecognition elements. The biosensor is designed, fabricated, and tested for the detection and quantification of a protein that reveals the presence of early-sta...
The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output...
Besides the application of the photonic crystal for the photodetector in the visible range, the infrared devices proposed with subwavelength structure are numerically and experimentally investigated thoroughly for infrared radiation sensing in this r...
This paper presents a dual-band fully integrated high linearity CMOS power amplifier (PA). The PA employs a reconfigurable transformer in the input matching network to achieve low reflection coefficient across both bands, demonstrating significant fl...
A 1.1 µW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CM...
We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wist...
Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionall...
Microchannel plate gated framing camera is commonly used in inertial confinement fusion diagnostics. However, it is a vacuum electronic device with bulkiness and non-single-line-of-sight imaging. To reduce the size of the camera and achieve a single...
This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs....
In this research, a new application of reduced graphene oxide (rGO) for a complementary metal-oxide-semiconductor (CMOS)-MEMS infrared (IR) sensor and emitter is proposed. Thorough investigations of IR properties including absorption and emission wer...
This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actu...
This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresis...
CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical perfor...
In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention bas...
Emerging infectious diseases such as coronavirus disease of 2019 (COVID-19), Ebola, influenza A, severe acute respiratory syndrome (SARS) and Middle East respiratory syndrome (MERS) in recent years have threatened the health and security of the globa...
The work reports on the development of a detailed noise current model for a low-noise capacitive feedback transimpedance amplifier (TIA) in CMOS. The proposed TIA circuit implements the programmable-gain using an array of discretely controlled feedba...
A voltage unity-gain zero-offset CMOS amplifier with reduced gain error and increased PSRR (power supply rejection ratio) is proposed. The amplifier uses two feed mechanisms, negative feedback and supporting positive feedforward, to achieve low devia...
In CMOS integrated circuit (IC) design, operational amplifiers are one of the most useful active devices to enhance applications in analog signal processing, signal conditioning and so on. However, due to the CMOS technology downscaling, along the ve...
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