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Article

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction

1
Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain
2
Instituto de Microelectrónica de Barcelona (IMB-CNM-CSIC), Campus UAB, Barcelona 08193, Spain
*
Author to whom correspondence should be addressed.
Academic Editor: Stefano Mariani
Sensors 2015, 15(7), 17036-17047; https://doi.org/10.3390/s150717036
Received: 21 May 2015 / Revised: 1 July 2015 / Accepted: 3 July 2015 / Published: 14 July 2015
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering)
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. View Full-Text
Keywords: NEMS; CMOS-NEMS; mechanical resonators; piezoresistive transduction; polysilicon nanowires NEMS; CMOS-NEMS; mechanical resonators; piezoresistive transduction; polysilicon nanowires
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MDPI and ACS Style

Marigó, E.; Sansa, M.; Pérez-Murano, F.; Uranga, A.; Barniol, N. Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction. Sensors 2015, 15, 17036-17047. https://doi.org/10.3390/s150717036

AMA Style

Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N. Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction. Sensors. 2015; 15(7):17036-17047. https://doi.org/10.3390/s150717036

Chicago/Turabian Style

Marigó, Eloi, Marc Sansa, Francesc Pérez-Murano, Arantxa Uranga, and Núria Barniol. 2015. "Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction" Sensors 15, no. 7: 17036-17047. https://doi.org/10.3390/s150717036

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