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Sensors 2015, 15(7), 17036-17047;

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction

Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain
Instituto de Microelectrónica de Barcelona (IMB-CNM-CSIC), Campus UAB, Barcelona 08193, Spain
Author to whom correspondence should be addressed.
Academic Editor: Stefano Mariani
Received: 21 May 2015 / Revised: 1 July 2015 / Accepted: 3 July 2015 / Published: 14 July 2015
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering)
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A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. View Full-Text
Keywords: NEMS; CMOS-NEMS; mechanical resonators; piezoresistive transduction; polysilicon nanowires NEMS; CMOS-NEMS; mechanical resonators; piezoresistive transduction; polysilicon nanowires

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Marigó, E.; Sansa, M.; Pérez-Murano, F.; Uranga, A.; Barniol, N. Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction. Sensors 2015, 15, 17036-17047.

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