Next Article in Journal
Height Resolution of Antibody Spots Measured by Spinning-Disk Interferometry on the BioCD
Next Article in Special Issue
Fabrication and Measurement of a Suspended Nanochannel Microbridge Resonator Monolithically Integrated with CMOS Readout Circuitry
Previous Article in Journal
Opto-Microfluidic Immunosensors: From Colorimetric to Plasmonic
Previous Article in Special Issue
CMOS MEMS Fabrication Technologies and Devices
Article Menu

Export Article

Open AccessArticle
Micromachines 2016, 7(2), 30;

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain
Author to whom correspondence should be addressed.
Academic Editor: Ching-Liang Dai
Received: 21 December 2015 / Revised: 21 January 2016 / Accepted: 2 February 2016 / Published: 15 February 2016
(This article belongs to the Special Issue CMOS-MEMS Sensors and Devices)
Full-Text   |   PDF [3655 KB, uploaded 15 February 2016]   |  


This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach. View Full-Text
Keywords: CMOS-NEMS; NEMS; NEMS switch; copper switch CMOS-NEMS; NEMS; NEMS switch; copper switch

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Muñoz-Gamarra, J.L.; Uranga, A.; Barniol, N. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology. Micromachines 2016, 7, 30.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top