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Open AccessArticle

A Standard CMOS Humidity Sensor without Post-Processing

Maenaka Human-sensing Fusion Project, 8111, Shosha 2167, Himeji-shi, 671-2280 Hyogo-ken, Japan
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Sensors 2011, 11(6), 6197-6202; https://doi.org/10.3390/s110606197
Received: 20 April 2011 / Revised: 1 June 2011 / Accepted: 3 June 2011 / Published: 8 June 2011
(This article belongs to the Section Physical Sensors)
A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter. View Full-Text
Keywords: capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits
MDPI and ACS Style

Nizhnik, O.; Higuchi, K.; Maenaka, K. A Standard CMOS Humidity Sensor without Post-Processing. Sensors 2011, 11, 6197-6202. https://doi.org/10.3390/s110606197

AMA Style

Nizhnik O, Higuchi K, Maenaka K. A Standard CMOS Humidity Sensor without Post-Processing. Sensors. 2011; 11(6):6197-6202. https://doi.org/10.3390/s110606197

Chicago/Turabian Style

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke. 2011. "A Standard CMOS Humidity Sensor without Post-Processing" Sensors 11, no. 6: 6197-6202. https://doi.org/10.3390/s110606197

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