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Sensors 2010, 10(4), 3857-3867;

Carbon Nanotube Integration with a CMOS Process

Grupo MEMS, Comision Nacional de Energia Atomica, San Martin 1650, Buenos Aires, Argentina
School of Chemical, Biological and Materials Engineering, University of Oklahoma, Norman, OK 73019, USA
Departamento de Ingenieria Electrica y de Computadoras, Universidad Nacional del Sur, Bahia Blanca B8000FTN, Argentina
INTEMA Facultad de Ingenieria, Universidad Nacional de Mar del Plata, Mar del Plata B7608FDQ, Argentina
Author to whom correspondence should be addressed.
Received: 27 January 2010 / Revised: 6 April 2010 / Accepted: 9 April 2010 / Published: 15 April 2010
(This article belongs to the Special Issue Advances in Transducers)
Full-Text   |   PDF [1111 KB, uploaded 21 June 2014]


This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. View Full-Text
Keywords: carbon nanotube sensor; CMOS integration; microchip sensor; SWCNT carbon nanotube sensor; CMOS integration; microchip sensor; SWCNT
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Perez, M.S.; Lerner, B.; Resasco, D.E.; Obregon, P.D.P.; Julian, P.M.; Mandolesi, P.S.; Buffa, F.A.; Boselli, A.; Lamagna, A. Carbon Nanotube Integration with a CMOS Process. Sensors 2010, 10, 3857-3867.

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