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Photonics 2018, 5(4), 50; https://doi.org/10.3390/photonics5040050

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Hiroshima University, Higashihiroshima 7398530, Japan
Received: 28 October 2018 / Revised: 16 November 2018 / Accepted: 20 November 2018 / Published: 23 November 2018
(This article belongs to the Special Issue Terahertz Photonics)
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Abstract

In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future. View Full-Text
Keywords: terahertz; CMOS; BiCMOS; silicon; integrated circuit; wireless communication; transceiver; ultrahigh speed terahertz; CMOS; BiCMOS; silicon; integrated circuit; wireless communication; transceiver; ultrahigh speed
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Fujishima, M. Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits. Photonics 2018, 5, 50.

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