94 Results Found

Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem...

Memristors are state-of-the-art, nano-sized, two-terminal, passive electronic elements with very good switching and memory characteristics. Owing to their very low power usage and a good compatibility to the existing CMOS ultra-high-density integrate...

Memristors, as novel one-port electronic elements, have very good memory and commutating properties, insignificant power consumption, and a good compatibility to present CMOS integrated chips. They are applicable in neural networks, memory arrays, an...

Oxide electrolyte-gated transistors have shown the ability to emulate various synaptic functions, but they still require a high gate voltage to form long-term plasticity. Here, we studied electrolyte-gated transistors based on InO_x with tungsten dopi...

Smart textiles promise to have a significant impact on future wearable devices. Among the different approaches to combine electronic functionality and fabrics, the fabrication of active fibers results in the most unobtrusive integration and optimal c...

Electroluminescence of metal halide perovskites has been widely reported via the fabrication and optimization of light-emitting diodes and light-emitting transistors. Light-emitting transistors are particularly interesting owing to the additional con...

Field Effect Transistors (FETs) have led the progress of applications measuring the acidity in aqueous solutions thanks to their accuracy, ease of miniaturization and capacity of multiplexing. The signal-to-noise ratio and linearity of the sensors ar...

The novel concept of reliable voltage balancing on N fast high-voltage (HV) transistors, connected in series, is verified by computer modeling/experimental testing. The essence of the concept is to transfer the balancing function from conventional sn...

Ultra low power circuits require robust and reliable operation despite the unavoidable use of low currents and the weak inversion transistor operation region. For analogue domain filtering doubly terminated LC ladder based filter topologies are thus...

Vacuum transistors (VTs) are promising candidates in electronics due to their fast response and ability to function in harsh environments. In this study, several oscillator and logic gate circuit simulations using VTs are demonstrated. Silicon-gated...

Graphene, known as an alternative for silicon, has significant potential in microelectronic applications. The assembly of graphene on well-defined metal electrodes is a critical step in the fabrication of microelectronic devices. Herein, we present a...

In this paper, we investigated the electrical coupling between the top and bottom transistors in a monolithic 3-dimensional (3D) inverter (M3INV) stacked vertically with junctionless field-effect transistor (JLFET), which is one of candidates to repl...

Transglutaminase 2 (TG2) is a ubiquitously expressed member of the transglutaminase family with Ca2+-dependent protein crosslinking activity. Its subcellular localization is crucial in determining its function, and indeed, TG2 is found in the extrace...

The primary objective of neuromorphic electronic devices is the implementation of neural networks that replicate the memory and learning functions of biological synapses. To exploit the advantages of electrolyte gate synaptic transistors operating li...

This paper presents a physics-guided machine learning (PGML) approach to model the I–V characteristics of GaN current aperture vertical field effect transistors (CAVET). By adopting the method of transfer learning and the shortcut structure, a...

In the current paper, an analysis of the influence of cooling system selection on the thermal parameters of two thermally coupled power MOSFETs is presented. The required measurements of the thermal parameters were performed using the indirect electr...

Organic light emitting transistors (OLETs) combine, in the same device, the function of an electrical switch with the capability of generating light under appropriate bias conditions. In this work, we demonstrate how engineering the dielectric layer...

Poly(p-xylylene) derivatives, widely known as Parylenes, have been considerably adopted by the scientific community for several applications, ranging from simple passive coatings to active device components. Here, we explore the thermal, structural,...

This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are eva...

Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. Buffer and dilution factor are prevalent strategies towards the optimum performa...

In this paper, a novel current-mode shadow filter employing current-controlled current conveyors (CCCIIs) with controlled current gains is presented. The CCCII-based current-mode shadow filters are resistorless and can offer a number of advantages su...

The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices. At present, most of the irradiation research on the...

The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In...

In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale tech...

Voltage-mode and current-mode fractional-order filter topologies, which are capable of realizing various types of transfer functions, are introduced in this paper. Thanks to the employment of the transconductance parameter of the MOS transistors, the...

This paper offers a new current-mode first-order versatile filter employing two translinear current conveyors with controlled current gain and one grounded capacitor. The proposed filter offers the following features: realization of first-order trans...

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted...

This study investigates the interfacial interactions between two organic semiconductors (tetrathiafulvalene (TTF) and hexaazatriphenylene-hexacarbonitrile (HAT-CN)) and graphene-based materials (nanocrystalline graphite and vertically aligned graphen...

The diversity of brain functions depend on the release of neurotransmitters in chemical synapses. The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the profi...

High-performance n-type organic semiconducting polymers are key components of next-generation organic electronics. Here, we designed and synthesized two electron deficient organic polymers composed of benzodifurandione-based oligo (p-phenylenevinylen...

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all...

An alternative procedure for the implementation of fractional-order compensators is presented in this work. The employment of a curve-fitting-based approximation technique for the approximation of the compensator transfer function offers improved acc...

Graphene field-effect transistors (GFETs) exhibit unique switch and sensing features. In this article, GFETs are investigated within the tight-binding formalism, including quantum capacitance correction, where the graphene ribbons with reconstructed...

Colloidal quantum dots (QDs) and graphene hybrids have emerged as promising platforms for optoelectronic and biosensing applications due to their unique photophysical and electronic properties. This study investigates the fundamental mechanism underl...

In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe₂) using two insulator materials, silicon dioxide (SiO₂) and silicon nitride (SiN). We performed...

This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequenc...

A new hybrid step-up converter suitable in applications where large conversion ratios are needed is presented. The topology is still simple, containing only one transistor and three diodes. A detailed dc and ac analysis is performed and all design eq...

A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and th...

This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate...

This paper presents a versatile first-order analog filter using differential difference transconductance amplifiers (DDTAs). The DDTA employs the bulk-driven (BD) multiple-input MOS transistors technique (MI-MOST) operating in the subthreshold region...

In this paper, we studied how the switching characteristics of a power conversion system could be improved using gallium nitride (GaN) devices. To this end, a circuit system applying GaN field effect transistors (FETs) was modeled to derive a mathema...

This paper presents a novel low-power low-voltage current differencing transconductance amplifier (CDTA). To achieve a low-voltage low-power CDTA, the BD-MOST (bulk-driven MOS transistor) technique operating in a subthreshold region is used. The prop...

This study proposes a phosphosilicate glass (PSG)-based electrolyte gate synaptic transistor with varying phosphorus (P) concentrations. A metal oxide semiconductor capacitor structure device was employed to measure the frequency-dependent (C-f) capa...

Our study develops two configurations of MoS₂ and graphene heterostructures—MoS₂ on graphene (MG) and graphene on MoS₂ (GM)—to investigate biomolecule sensing in field-effect transistor (FET) biosensors. Leveraging MoS₂ and graphene&rsquo...

In this paper, a novel multiple-input operational transconductance amplifier (MI-OTA) is proposed. The MI-OTA can be obtained by using the multiple-input bulk-driven MOS transistor (MIBD MOST) technique. The circuit structure is simple, can operate w...

A digital control scheme for GaN transistor-based totem pole power factor correction (PFC) is proposed in this paper. At the zero crossing, the totem pole PFC has a discontinuous conduction mode (DCM) current section because of its driving method and...

In this study, we propose the use of artificial synaptic transistors with coplanar-gate structures fabricated on paper substrates comprising biocompatible and low-cost potato-starch electrolyte and indium–gallium–zinc oxide (IGZO) channel...

Construction of ordered electron acceptors is a feasible way to solve the issue of phase separation in polymer solar cells by using vertically-aligned ZnO nanorod arrays (NRAs). However, the inert charge transfer between conducting polymer and ZnO li...

Two solution-processable small organic molecules, (E)-6,6′-bis(4-(diphenylamino)phenyl)-1,1′-bis(2-ethylhexyl)-(3,3′-biindolinylidene)-2,2′-dione (coded as S10) and (E)-6,6′-di(9H-carbazol-9-yl)-1,1′-bis(2-ethylhexyl)-(3,3′-biindolinylidene)-2,2′-dio...

The investigation of size effects appearing in the dependence of AlGaN/GaN HEMT high-frequency characteristics on channel width d and number of sections n is conducted using the notions of measure, metric and normed functional (linear) spaces. In acc...