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Open AccessArticle

The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs

1
Laboratory of Intelligent Computer Systems, Tomsk State University of Control Systems and Radioelectronics (TUSUR), 634050 Tomsk, Russia
2
Research Institute of Semiconductor Devices, JSC, 634034 Tomsk, Russia
3
Tomsk State University (TSU), 634050 Tomsk, Russia
*
Author to whom correspondence should be addressed.
Symmetry 2019, 11(12), 1495; https://doi.org/10.3390/sym11121495
Received: 31 October 2019 / Revised: 2 December 2019 / Accepted: 5 December 2019 / Published: 9 December 2019
(This article belongs to the Special Issue Information Technologies and Electronics)
The investigation of size effects appearing in the dependence of AlGaN/GaN HEMT high-frequency characteristics on channel width d and number of sections n is conducted using the notions of measure, metric and normed functional (linear) spaces. In accordance with the results obtained, in local approximation the phenomenon of similarity can exist, not only in metric spaces of heteroepitaxial structures, but also in the defined on them functional spaces of the measures of these structures’ additive electrophysical characteristics. This provides means to associate size effects of the HEMTs with their structure material fractal geometry. The approach proposed in the work gives an opportunity, not only to predict the size of the structural elements (e.g., channel width and number of sections) of the transistor with the desired characteristics, but also to reconstruct its compact model parameters, which significantly speeds up the development and optimization of the HEMTs with the desired device characteristics. At transferring to the global approximation, when the topological and fractal dimensions of the structure coincide, its electrophysical characteristics, and subsequently, the values of the compact model equivalent circuit parameters, as well as HEMT high frequency characteristics, follow the classic (linear) laws peculiar to the spaces of integer topological dimensions DT. View Full-Text
Keywords: fractals; metric space; functional space; gallium nitride; heteroepitaxial structures; HEMT; microwave S-parameters; linear model; size effects fractals; metric space; functional space; gallium nitride; heteroepitaxial structures; HEMT; microwave S-parameters; linear model; size effects
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Torkhov, N.A.; Babak, L.I.; Kokolov, A.A. The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs. Symmetry 2019, 11, 1495.

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