An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor
Abstract
1. Introduction
2. Materials and Methods
3. Results
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Xie, D.; Liang, X.; Geng, D.; Wu, Q.; Liu, C. An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor. Electronics 2024, 13, 1485. https://doi.org/10.3390/electronics13081485
Xie D, Liang X, Geng D, Wu Q, Liu C. An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor. Electronics. 2024; 13(8):1485. https://doi.org/10.3390/electronics13081485
Chicago/Turabian StyleXie, Dongyu, Xiaoci Liang, Di Geng, Qian Wu, and Chuan Liu. 2024. "An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor" Electronics 13, no. 8: 1485. https://doi.org/10.3390/electronics13081485
APA StyleXie, D., Liang, X., Geng, D., Wu, Q., & Liu, C. (2024). An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor. Electronics, 13(8), 1485. https://doi.org/10.3390/electronics13081485