Next Article in Journal
A New Label-Free and Contactless Bio-Tomographic Imaging with Miniaturized Capacitively-Coupled Spectroscopy Measurements
Previous Article in Journal
Creating the Internet of Augmented Things: An Open-Source Framework to Make IoT Devices and Augmented and Mixed Reality Systems Talk to Each Other
Open AccessArticle

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

1
Applied Physics Laboratory, Faculty of Electronic Engineering, University of Niš, 18000 Niš, Serbia
2
Department of Radiation and Environmental Protection, “Vinča” Institute of Nuclear Sciences, 11351 Belgrade, Serbia
*
Author to whom correspondence should be addressed.
Sensors 2020, 20(11), 3329; https://doi.org/10.3390/s20113329
Received: 4 May 2020 / Revised: 28 May 2020 / Accepted: 5 June 2020 / Published: 11 June 2020
(This article belongs to the Section Physical Sensors)
This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD. View Full-Text
Keywords: floating-gate MOS transistor; ionizing radiation sensor; ZTC; semiconductor dosimeter; transistor dynamic biasing floating-gate MOS transistor; ionizing radiation sensor; ZTC; semiconductor dosimeter; transistor dynamic biasing
Show Figures

Figure 1

MDPI and ACS Style

Ilić, S.; Jevtić, A.; Stanković, S.; Ristić, G. Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor. Sensors 2020, 20, 3329.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop