We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO2 as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep t...
SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma par...
This study investigated the effect of temperature on the aspect-ratio etching of SiO2 in CF4/H2/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates an...
Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4...
As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal...
This study presents the feasibility of the use of hexafluoroisopropanol (HFIP) as a substitute to perfluorocarbon (PFC) for the plasma etching of SiO2 to confront the continuous increase in demand for PFC emission reduction. SiO2 etching is conducted...
The present study focuses on the etching conditions and mechanism of MgO-Al2O3-SiO2 glass-ceramic (MAS) in hydrofluoric acid (HF). The results show that the amorphous phase has 218 times higher etching rate than pure cordierite crystal at room temper...
Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves...
As semiconductor devices become miniaturized, the importance of the molecular-level understanding of the fabrication processes is growing. Titanium nitride (TiN) is an important material utilized in various architectural components of semiconductor d...
As low-temperature plasma plays an important role in semiconductor manufacturing, plasma diagnostics have been widely employed to understand changes in plasma according to external control parameters, which has led to the achievement of appropriate p...
Submicron lenses and cylinders exhibiting excellent properties in photodetector and quantum applications have been fabricated on a diamond surface by an inductively-coupled plasma (ICP) etching technique. During ICP etching, a layer containing 500 nm...
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other no...
This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etcha...
In this work, we carried out the study of CF4 + O2 + X (X = C4F8 or CF2Br2) gas chemistries in respect to the SiOxNy reactive-ion etching process in a low power regime. The interest in the liquid CF2Br2 as an additive component is motivated by its ge...
This paper proposes the use of environmentally friendly alternatives, C6F6 and C4H2F6, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO2 plasma etching, instead of conventional precursors C4F8 and CHF3. The study...
The UF membrane with a narrow and uniform pore size distribution and a low tendency to foul has significant applications in wastewater treatment. A major hindrance in the preparation of the UF membrane with these features is the lack of a scalable an...
The etching properties of C6F6/Ar/O2 in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristic...
This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2, and SixNy) as well as for the silicon itself in multi-component flu...
Heptafluoropropyl methyl ether (HFE-347mcc3), as a lower-GWP (global warming potential) alternative to PFCs (perfluorocarbons), was used to etch SiO2 contact holes. The etch profiles of the SiO2 contact holes in HFE-347mcc3/O2/Ar plasmas showed more...
Along with the soaring demands for all-solid-state thin-film lithium-ion batteries, the problem of their energy density rise becomes very acute. The solution to this problem can be found in development of 3D batteries. The present work deals with the...
Etched ion-track polycarbonate membranes with conical nanochannels of aspect ratios of ~3000 are coated with Al2O3, TiO2, and SiO2 thin films of thicknesses between 10 and 20 nm by atomic layer deposition (ALD). By combining ion-track technology and...
In this study, a preparation method of superhydrophobic composite coating based on a titanium alloy (Ti-6Al-4V) substrate is proposed. The micro-scale pit array structure was fabricated via laser etching technology. Utilizing the synergistic effects...
The electromechanical coupling factor (K2) is one of the key parameters characterizing the performance of surface acoustic wave (SAW) devices. Conventional SAW structures suffer from a spatial mismatch between mechanical energy and electric fields, w...
To develop plasma-resistant glass materials suitable for semiconductor etching processes, we introduced alkaline earth oxides (ROs) into a Li2O–Al2O3–SiO2 (LAS) glass. Analysis of glass properties with respect to the additives revealed th...
This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power...
We demonstrate high-extraction-rate Ta2O5-core/SiO2-clad photonic waveguides on silicon fabricated by the photolithography-assisted chemo-mechanical etching technique. Low-confinement waveguides of larger than 70% coupling efficiency with optical fib...
With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order a...
Silicon nitride (Si3N4) etching using CF4/O2 mixed with N2 has become very popular in 3D NAND flash structures. However, studies on Si3N4 dry etching based on optical emission spectroscopy (OES) are lacking; in particular, no study has reported the u...
The SiGe/Si multilayer is a critical component for fabricating stacked Si channel structures for next-generation three-dimensional (3D) logic and 3D dynamic random-access memory (3D-DRAM) devices. Achieving these structures necessitates highly select...
The paradigm shift from FinFET to gate-all-around nanosheet (GAA-NS) transistor architectures necessitates fundamental innovations in channel material engineering. This work addresses the critical challenge of pFET performance degradation in GAA-NS t...
Brazing a SiO2f/SiO2 composite with metals is often faced with two problems: poor wettability with the brazing alloy and high residual stress in the joint. To overcome these problems, we report a combined method of selective etching and depositing re...
This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively co...
Surface acoustic wave (SAW) devices based on multi-layer structures have been widely used in filters and sensors. The electromechanical coupling factor (K2), which reflects energy-conversion efficiency, directly determines the bandwidth of the filter...
In this study, binary SiO2-CaO hollow mesoporous bioactive glass nanoparticles (HMBGNs) are prepared by combing selective etching and impregnation strategies. Spherical silica particles (SiO2 NPs) are used as hard cores to assemble cetyltrimethylammo...
Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the...
A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first f...
In this paper, the conditions of the dip-coating method of SiO2 nanospheres are optimized, and a neatly arranged single-layer SiO2 array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN lay...
Thermoresponsive P(NIPAM-AA)/Fe3O4/SiO2 microspheres with surface holes serving as carriers were prepared using p-Fe3O4/SiO2 microspheres with a thermoresponsive copolymer. The p-Fe3O4/SiO2 microspheres was obtained using a modified Pickering method...
In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. P...
The nanoparticles dispersion system has complex migration characteristics and percolation law in porous media due to the interaction between the nanoparticles and porous media. In this paper, lab experiments were carried out to characterize the morph...
The silicon etching process is a core component of production in the semiconductor industry. Undercut is a nonideal effect in silicon dry etching. A reduced undercut is desired when preparing structures that demand a good sidewall morphology, while a...
To fully utilize the advantages of Si3N4 and Silicon-On-Insulator to achieve a high-efficiency wideband grating coupler, we propose and numerically demonstrate a grating coupler based on Si3N4 and a Silicon-On-Insulator heterogeneous integration plat...
TiO2 and core–shell SiO2@TiO2 nanoparticles were synthesized by sol-gel process at different calcination temperatures. Mesoporous hollow TiO2 composites were prepared by etching SiO2 from SiO2@TiO2 nanoparticles with alkali solution. X-ray diff...
The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3....
The miniaturization of devices requires the introduction of a high aspect ratio through patterning in the Damascene copper interconnect process. The high aspect ratio etch process employs hardmasks, such as amorphous carbon, that can withstand high-p...
We examined how controlling variables in a pre-metallization Ar sputter-etching process for in situ contact-hole cleaning affects the contact-hole profile, etching rate, and substrate damage. By adjusting process parameters, we confirmed that increas...
SiO2 has a much higher theoretical specific capacity (1965 mAh g−1) than graphite, making it a promising anode material for lithium-ion batteries, but its low conductivity and volume expansion problems need to be improved urgently. In this work...
A novel method has been developed to fabricate submicron beams with galvanic etch stop for Si in TMAH. The different Au:Si area ratios before and after the release of the beams are used to trigger the galvanic etch stop to fabricate submicron single...
In energy conversion semiconductor devices, radiation damage is directly related to the long-term stability of β-voltaic batteries. In this study, single-crystalline silicon P+NN+ devices and P+-silicon materials with SiO2 surface passivation we...
Passivated, selective contacts in silicon solar cells consist of a double layer of highly doped polycrystalline silicon (poly Si) and thin interfacial silicon dioxide (SiO2). This design concept allows for the highest efficiencies. Here, we report on...
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