50 Results Found

Flexible Sb₂Te₃-based thermoelectric (TE) materials are promising candidates for fabricating energy devices that power wearable electronics and sensors. Enhancing the TE properties of Sb₂Te₃ thin films represents a significant scientific investigatio...

We investigated the texture formation of Sb₂Te thin films for phase change memory applications. The Sb₂Te thin films with different thicknesses were deposited on Si (100) wafers by the magnetron sputtering method. As-deposited Sb₂Te thin films were a...

Antimony selenide (Sb₂Se₃) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (V_oc) limits the power conversion efficiency (PCE) of Sb₂Se₃-based cells, largely due to the low-char...

Ge₂Sb₂Te₅ based devices attract the attention of researchers due to wide opportunities in designing phase change memory. Herein, we studied a possibility to fabricate periodic micro- and nanorelief at surfaces of Ge₂Sb₂Te₅ thin films on silicon oxide...

The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositio...

Thermoelectric thin films have been widely explored for thermal-to-electrical energy conversion or solid-state cooling, because they can remove heat from integrated circuit (IC) chips or micro-electromechanical systems (MEMS) devices without involvin...

Cadmium sulfide has been widely used as a conventional n-type window/buffer layer or heterojunction partner in several p-type thin-film solar cells, including CdTe/CdSeTe-, chalcopyrite-, kesterite-, antimony chalcogenide-, tin sulfide- and iron pyri...

Thin-film solar cells have been referred to as second-generation solar photovoltaics (PV) or next-generation solutions for the renewable energy industry. The layer of absorber materials used to produce thin-film cells can vary in thickness, from nano...

Ultrathin films of the ternary topological insulator (Bi${}_{0.4}$Sb${}_{0.6}$)${}_2$Te${}_3$ are fabricated by molecular beam epitaxy. Although it is generally assumed that the ternary topological insulator tellurides grow by van der Waals epitaxy, our results show that th...

The present work describes the process of obtaining thin films of Ge₁Sb₂Te₄ by means of the short-pulse High Power Impulse Magnetron Sputtering (HiPIMS) technique. The Ge₁Sb₂Te₄ (GST-124) and nitrogen Ge₁Sb₂Te₄ (nitrogen GST-124) films were obtained...

For thermoelectric thin film, the substrate plays an important role during the growing process and produces effects on its thermoelectric properties. Some special kinds of substrates provide an optimal combination of influences on both the structure...

The results of study of charge transfer processes in thin amorphous and crystalline Sb₂Te₃ films in a wide range of frequencies and temperatures are presented. The frequency spectra of conductivity were obtained by the dielectric spectroscopy method....

Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition (PLD) in various experimental conditions. The thickness of the samples was influenced by the Nd-YAG laser wavelength, fluence, target-to-substrate distance, and deposition...

Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of...

Thermoelectric power can convert heat and electricity directly and reversibly. Low-dimensional thermoelectric materials, particularly thin films, have been considered a breakthrough for separating electronic and thermal transport relationships. In th...

In this study, Se-excess Ge₂Sb₂Se_xTe₁ (GSST) thin films were synthesized via magnetron co-sputtering. The crystal structure, surface morphology, complex refractive index, and bandgap of the Se-excess GSST thin films were systematically investigated....

Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate s...

Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board c...

Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb₂Te₃ tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material w...

Ge₂Sb₂Te₅ (GST225) looks to be a promising material for rewritable memory devices due to its relatively easy processing and high optical and electrophysical contrast for the crystalline and amorphous phases. In the present work, we combined the possi...

In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge ${}_2$ Sb ${}_2$ Te ${}_5$ (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works...

Antimony selenide (Sb₂Se₃) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb₂Se₃ thin film greatly influenced the...

This paper presents a comprehensive investigation into the thermal stability of superlattice-like (SLL) thin films fabricated by varying the sputtering sequences of the SLL [Ge₈Sb₉₂(25nm)/GeTe(25nm)]₁ and SLL [GeTe(25nm)/Ge₈Sb₉₂(25nm)]₁ configuration...

Antimony telluride thin films display intrinsic thermoelectric properties at room temperature, although their Seebeck coefficients and electrical conductivities may be unsatisfactory. To address these issues, we designed composite films containing up...

Thermoelectric materials in the form of thin films are used to create a wide variety of sensors and devices. The efficiency of these devices depends on the quality and efficiency of the thermoelectric materials obtained in the form of thin films. Ear...

In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physic...

In this work, we developed nanostructured Bi₂Te₃ and Sb₂Te₃ thin films by thermal co-evaporation of their alloys with corresponding pure elements (Bi, Sb, and Te). The films were fabricated on borosilicate glass at different substrate temperatures an...

Bismuth–telluride-based alloys are excellent thermoelectric materials for Peltier modules and thermoelectric generators (TEGs). Owing to the emergence of the Internet of Things (IoT), the demand for sensors has increased considerably and self-p...

In this study, the efficient generation of terahertz radiation by a dipole photoconductive antenna, based on a thin island film of a topological insulator, was experimentally demonstrated. The performance of the Bi_1.9Sb_0.1Te₂Se antenna was shown to b...

To reduce consumption for ambient assisted living (AAL) applications, we propose the design and fabrication of flexible thin-film thermoelectric generators at a low manufacturing cost. The generators were fabricated using a combination of electrodepo...

In this work, we performed laser annealing of thin Sb₂Te₃ films to optimize crystallization time and their nonlinear optical properties. The annealed layers were studied by electron microscopy and UV–Vis spectrophotometry. Their nonlinear optic...

Thin-film thermoelectric generators are not widely used mainly because it is difficult to provide a temperature difference (ΔT) within the generators. To solve this problem, in our previous study, we prepared slope-type thin-film thermoelectric...

The exploration initiated by the discovery of the topological insulator (Bi_xSb_1−x)₂Te₃ has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electr...

The influence of substrate type in boosting thermoelectric properties of co-evaporated Bi2Te3 and Sb2Te3 films (with 400 nm-thick) is here reported. Optimized power factor values are 2.7 × 10⁻³ W K⁻² m⁻¹ and 1.4 × 10⁻³ W K⁻² m⁻¹ for flexible Bi2Te3 a...

To conveniently generate electric energy for next-generation smart network monitoring systems, we propose the design and fabrication of slope-type thin-film thermoelectric generators by the simple contact of a heat source. N-type Bi₂Te₃ films and p-t...

Magnetron sputtering offers a scalable route to magnetic topological insulators (MTIs) based on Cr-doped Sb₂Te₃. We combine a range of X-ray diffraction (XRD), reciprocal-space mapping (RSM), scanning transmission electron microscopy (STEM), scanning...

Recently, Kayyalha et al. (Phys. Rev. Lett., 2019, 122, 047003) reported on the anomalous enhancement of the self-field critical currents (I_c(sf,T)) at low temperatures in Nb/BiSbTeSe₂-nanoribbon/Nb Josephson junctions. The enhancement was attributed...

The range of fundamental phenomena and applications achievable by metamaterials (MMs) can be significantly extended by dynamic control over the optical response. A mid-infrared tunable absorber which consists of lithography-free planar multilayered d...

The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi_0.4Sb_0.6)₂Te₃ films...

A new technology to write and read covert information in authentication labels is described. This technology uses the phenomenon of photo-induced chirality in Ge₂Sb₂Te₅ thin films to encode the left- or right-circular or linear polarization of the la...

Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, chalcogenide material properties are dependent on the deposition technique. GST-225 thin films were prepared using three deposition methods: magnetron...

Thin-film solar cells are simple and affordable to produce, but their efficiency is low compared to crystalline-silicon solar cells, and needs to be improved. This study investigates the photovoltaic performance of different absorber materials (CdTe,...

Two types of devices capable of switchable infrared spectral control are demonstrated by utilizing the phase-change characteristics of In₃SbTe₂ (Indium–Antimony–Tellurium, IST), which transitions from a low-loss dielectric amorphous phase...

We attempted to modify the monoclinic–rutile structural phase transition temperature (T_tr) of a VO₂ thin film in situ through stress caused by amorphous–crystalline phase change of a chalcogenide layer on it. VO₂ films on C- or R-plane Al...

This study successfully fabricated the quaternary topological insulator thin films of Bi_1.2Sb_0.8Te_0.4Se_2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the sepa...

Non-volatile memories based on phase-change materials have gained ground for applications in analog in-memory computing. Nonetheless, non-idealities inherent to the material result in device resistance variations that impair the achievable numerical...

Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal....

Customized metasurfaces allow for controlling optical responses in photonic and optoelectronic devices over a broad band. For sensing applications, the spectral response of an optical device can be narrowed to a few nanometers, which enhances its cap...

The nanostructure composed of nanomaterials and subwavelength units offers flexible design freedom and outstanding advantages over conventional devices. In this paper, a multifunctional nanostructure with phase-change material (PCM) is proposed to ac...

Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and...