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Open AccessArticle

The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film

Department of Physics, Faculty of Sciences, University of Craiova, A.I. Cuza No. 1, Craiova 200585, Romania
Coatings 2018, 8(4), 117;
Received: 24 January 2018 / Revised: 20 March 2018 / Accepted: 21 March 2018 / Published: 23 March 2018
PDF [9860 KB, uploaded 3 May 2018]


The present work describes the process of obtaining thin films of Ge1Sb2Te4 by means of the short-pulse High Power Impulse Magnetron Sputtering (HiPIMS) technique. The Ge1Sb2Te4 (GST-124) and nitrogen Ge1Sb2Te4 (nitrogen GST-124) films were obtained in HiPIMS plasma ignited in Ar/GST-124 and Ar/N2/GST-124, respectively. In particular, the possibility of tailoring the electrical properties of films for applications in the phase change memory (PCM) cells was investigated. The IV measurements performed in a voltage sweeping mode on GST-124 and nitrogen GST-124 show that the threshold switching voltage varies as a function of nitrogen level in HiPIMS plasma. Amorphous-to-crystalline trigonal phase transition of the films was induced by thermal annealing, and structural changes were identified using X-ray diffraction and Raman scattering spectroscopy. The most intense bands appeared for the annealed layers in the range of 138–165 cm−1, for GST-124, and 138–150 cm−1 for nitrogen GST-124, respectively. View Full-Text
Keywords: chacogenide GST-124; phase mixing; IV characteristics; XRD; Raman; AFM chacogenide GST-124; phase mixing; IV characteristics; XRD; Raman; AFM

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Osiac, M. The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film. Coatings 2018, 8, 117.

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